Epoxy Composites with Surface Modified Silicon Carbide Filler for High Temperature Molding Compounds

2019 ◽  
Author(s):  
Fan Wu ◽  
Nicholas C. Mitchell ◽  
Bo Song ◽  
Kyoung-sik Moon ◽  
C.P. Wong
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Epoxy Composites ◽  
Molding Compounds ◽  
Surface Modified

DURALCAN F3S.xxS

Alloy Digest ◽  
1994 ◽  
Vol 43 (10) ◽  
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Compressive Strength ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Base Alloy ◽  
Alloy Matrix ◽  
Reinforced Composite ◽  
Temperature Performance ◽  
Aluminum Alloy Matrix

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.

Effect of Ceramic Fillers on Mechanical Properties of Bamboo Fiber Reinforced Epoxy Composites: A Comparative Study

2010 ◽  
Vol 123-125 ◽  
pp. 1031-1034 ◽  
Author(s):  
Sandhyarani Biswas ◽  
Alok Satapathy ◽  
Amar Patnaik
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Red Mud ◽  
Synergistic Effects ◽  
Bamboo Fiber ◽  
Industrial Wastes ◽  
Epoxy Composites ◽  
Void Content ◽  
Filler Materials ◽  
Fiber Reinforced

In order to obtain the favoured material properties for a particular application, it is important to know how the material performance changes with the filler content under given loading conditions. In this study, a series of bamboo fiber reinforced epoxy composites are fabricated using conventional filler (aluminium oxide (Al2O3) and silicon carbide (SiC) and industrial wastes (red mud and copper slag) particles as filler materials. By incorporating the chosen particulate fillers into the bamboo-fiber reinforced epoxy, synergistic effects, as expected are achieved in the form of modified mechanical properties. Inclusion of fiber in neat epoxy improved the load bearing capacity (tensile strength) and the ability to withstand bending (flexural strength) of the composites. But with the incorporation of particulate fillers, the tensile strengths of the composites are found to be decreasing in most of the cases. Among the particulate filled bamboo-epoxy composites, least value of void content are recorded for composites with silicon carbide filling and for the composites with glass fiber reinforcement minimum void fraction is noted for red mud filling. The effects of these four different ceramics on the mechanical properties of bamboo- epoxy composites are investigated and the conclusions drawn from the above investigation are discussed.

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

New Generation of SiC Based Biodevices Implemented on 4” Wafers

2010 ◽  
Vol 645-648 ◽  
pp. 1097-1100 ◽  
Author(s):  
Phillippe Godignon ◽  
Iñigo Martin ◽  
Gemma Gabriel ◽  
Rodrigo Gomez ◽  
Marcel Placidi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Carbide ◽  
High Temperature ◽  
Temperature Sensors ◽  
Biomedical Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
New Generation ◽  
Growth Technology ◽  
Biosensor Applications

Silicon Carbide is mainly used for power semiconductor devices fabrication. However, SiC material also offers attractive properties for other types of applications, such as high temperature sensors and biomedical devices. Micro-electrodes arrays are one of the leading biosensor applications. Semi-insulating SiC can be used to implement these devices, offering higher performances than Silicon. In addition, it can be combined with Carbon Nanotubes growth technology to improve the devices sensing performances. Other biosensors were SiC could be used are microfluidic based devices. However, improvement of SiCOI starting material is necessary to fulfill the typical requirements of such applications.

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