Mechanism of Ultrasonic-Assisted Sintering of Cu@Ag NPs Paste in air for High-Temperature Power Device Packaging

2018 ◽  
Author(s):  
Hongjun Ji ◽  
Mingyu Li
Keyword(s):  
High Temperature ◽  
Power Device ◽  
Ag Nps ◽  
Ultrasonic Assisted

Bonding of power device to ceramic substrate using Sn-coated Cu micro paste for high-temperature applications

2020 ◽  
Vol 515 ◽  
pp. 146060 ◽  
Author(s):  
Jeong-Won Yoon ◽  
Soyoung Bae ◽  
Byung-Suk Lee ◽  
Seung-Boo Jung
Keyword(s):  
High Temperature ◽  
Ceramic Substrate ◽  
Power Device ◽  
Temperature Applications

SiC High Temperature Electronics for Next Generation Aircraft Controls Systems

1996 ◽  
Author(s):  
John F. Perkins ◽  
Richard H. Hopkins ◽  
Charles D. Brandt ◽  
Anant K. Agarwal ◽  
Suresh Seshadri ◽  
...  
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Technology Development ◽  
Temperature Tolerance ◽  
Oxide Semiconductor ◽  
Power Device ◽  
Next Generation ◽  
Power Devices ◽  
Basic Work ◽  
Aircraft Controls

Several organizations, including Westinghouse, CREE, and ATM, as well as researchers in Japan and Europe, are working to develop SiC power devices for reliable, high power and high temperature environments in military, industrial, utility, and automotive applications. Other organizations, such as NASA Lewis and several universities, are also doing important basic work on basic SiC technology development. It has been recognized for two decades that the superior properties of SiC lead to range of devices with higher power, greater temperature tolerance, and significantly more radiation hardness than silicon or GaAs. This combination of superior thermal and electrical properties results in SiC devices that can operate at up to ten times the power density of Si devices for a given volume. Recent research has focused on the development of vertical metal oxide semiconductor field effect transistor (VMOSFET) power device technology, and complementary high speed, temperature-tolerant rectifier-diodes for power applications. We are also evaluating applications for field control thyristors (FCT) and MOS turn-off thyristors (MTO). The technical issues to be resolved for these devices are also common to other power device structures. The present paper reviews the relative benefits of various power devices structures, with emphasis on how the special properties of SiC enhance the desirability of specific device configurations as compared to the Si-based versions of these devices. Progress in SiC material quality and recent power device research will be reviewed, and the potential for SiC-based devices to operate at much higher temperatures than Si-based devices, or with enhanced reliability at higher temperatures will be stressed. We have already demonstrated 1000V breakdown, current densities of 1 kA/cm2, and measurements up to 400°C in small diodes. The extension of this work will enable the implementation of highly distributed aircraft power control systems, as well as actuator and signal conditioning electronics for next generation engine sensors, by permitting electronic circuits, sensors and smart actuators to be mounted on or at the engine.

Preparation of a silver nanoparticle-based dual-functional sensor using a complexation–reduction method

2015 ◽  
Vol 17 (33) ◽  
pp. 21243-21253 ◽  
Author(s):  
Fwu-Long Mi ◽  
Shao-Jung Wu ◽  
Wen-Qi Zhong ◽  
Cheng-Yu Huang
Keyword(s):  
Silver Nanoparticles ◽  
High Temperature ◽  
Low Temperature ◽  
Silver Nanoparticle ◽  
Reduction Method ◽  
Ag Nps ◽  
Two Stage ◽  
Temperature Reduction ◽  
Dual Functional

A dual-functional sensor based on silver nanoparticles was synthesized by a two-stage procedure consisting of a low-temperature chitosan–Ag+ complexation followed by a high-temperature reduction of the complex to form chitosan-capped silver nanoparticles (CS-capped Ag NPs).

scholarly journals Simulation of a new hybrid Si/SiC power device for harsh environment applications

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000190-000194
Author(s):  
P.M. Gammon ◽  
C.W. Chan ◽  
P.A. Mawby
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Silicon On Insulator ◽  
Power Device ◽  
Harsh Environment ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Solar Inverter ◽  
Thermal Simulations ◽  
Soi Substrates

A new power device structure is proposed, conceived to operate in a high temperature, harsh environment, for example within a motor drive application down hole, as an inverter in the engine bay of an electric car, or as a solar inverter in space. The lateral silicon power device resembles a laterally diffused MOSFET (LDMOS), such as those implemented within silicon on insulator (SOI) substrates. However, unlike SOI, the Si thin film has been transferred directly onto a semi-insulating 6H silicon carbide (6H-SiC) substrate via a wafer bonding process. Thermal simulations of the hybrid Si/SiC substrate have shown that the high thermal conductivity of the SiC will have a junction-to-case temperature approximately 4 times less that an equivalent SOI device, reducing the effects of self-heating. Electrical simulations of a 600 V power device, implemented entirely with the silicon thin film, suggest that it will retain the ability of SOI to minimise leakage at high temperature, but does so with 50% less conduction losses.

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