scholarly journals Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

2017 ◽  
Author(s):  
Maximilian C. Scardelletti ◽  
Philip G. Neudeck ◽  
David J. Spry ◽  
Roger D. Meredith ◽  
Jennifer L. Jordan ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Integrated Circuit ◽  
Ring Oscillators ◽  
Capacitive Pressure Sensor

scholarly journals A Fully-Differential Switched-Capacitor Dual-Slope Capacitance-To-Digital Converter (CDC) for a Capacitive Pressure Sensor

Sensors ◽  
2019 ◽  
Vol 19 (17) ◽  
pp. 3673
Author(s):  
Christopher Rogi ◽  
Cesare Buffa ◽  
Niccolo De Milleri ◽  
Richard Gaggl ◽  
Enrique Prefasi
Keyword(s):  
Pressure Sensor ◽  
Integrated Circuit ◽  
Ambient Air ◽  
Micro Electro Mechanical System ◽  
Switched Capacitor ◽  
Capacitive Pressure Sensor ◽  
Fully Differential ◽  
Sensor Model ◽  
Low Performance ◽  
On Chip

This article focuses on a proposed Switched-Capacitor Dual-Slope based CDC. Special attention is paid to the measurement setup using a real pressure sensor. Performance scaling potential as well as dead zones are pointed out and discussed. In depth knowledge of the physical sensor behavior is key to design an optimal readout circuit. While this is true for high-end applications, low-performance IoT (Internet of Things) sensors aim at moderate resolution with very low power consumption. This article also provides insights into basic MEMS (Micro-Electro-Mechanical-System) physics. Based on that, an ambient air pressure sensor model for SPICE (Simulation-Program-with-Integrated-Circuit-Emphasis) circuit simulators is presented. The converter concept was proven on silicon in a 0.13 μ m process using both a real pressure sensor and an on-chip dummy MEMS bridge. A 3.2-ms measurement results in 13-bit resolution while consuming 35 μ A from a 1.5-V supply occupying 0.148 mm2. A state-of-the-art comparison identifies potential room for improvements towards hybrid solutions, which is proposed in subsequent publications already.

Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

2013 ◽  
Vol 562-565 ◽  
pp. 471-476 ◽  
Author(s):  
Hao Jie Lv ◽  
Tao Geng ◽  
Guo Qing Hu
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Sandwich Structure ◽  
High Sensitivity ◽  
High Accuracy ◽  
External Pressure ◽  
Harsh Environment ◽  
Capacitive Pressure Sensor ◽  
Technical Process ◽  
Higher Temperature

In the paper, a touch mode capacitive pressure sensor with double-notches structure is presented. The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in hash environment such as high-temperature. The analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has high sensitivity and long linear range simultaneously. In addition, the technical process of the sensor has been designed in detail in the paper. The research shows that the sensor packaged in a high-temperature ceramic AlN can withstand higher temperature. Consequently, the sensor can be applied in high-temperature and harsh environment.

scholarly journals High Reliability of MEMS Packaged Capacitive Pressure Sensor Employing 3C-SiC for High Temperature

2015 ◽  
Vol 68 ◽  
pp. 471-479 ◽  
Author(s):  
Noraini Marsi ◽  
Burhanuddin Yeop Majlis ◽  
Azrul Azlan Hamzah ◽  
Faisal Mohd-Yasin
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
High Reliability ◽  
Capacitive Pressure Sensor

scholarly journals A High Temperature Capacitive Pressure Sensor Based on Alumina Ceramic for in Situ Measurement at 600 °C

Sensors ◽  
2014 ◽  
Vol 14 (2) ◽  
pp. 2417-2430 ◽  
Author(s):  
Qiulin Tan ◽  
Chen Li ◽  
Jijun Xiong ◽  
Pinggang Jia ◽  
Wendong Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Alumina Ceramic ◽  
In Situ Measurement ◽  
Capacitive Pressure Sensor

A Study of Temperature Dependence for Capacitive Pressure Sensor

2011 ◽  
Vol 105-107 ◽  
pp. 2024-2027
Author(s):  
Hao Jie Lv ◽  
Guo Qing Hu ◽  
Xing Ye Wang
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
High Temperature ◽  
Temperature Dependence ◽  
Pressure Sensor ◽  
Capacitive Pressure Sensor ◽  
Material Parameters ◽  
Temperature Performance ◽  
Sensor Temperature ◽  
Element Method

In order to reveal the temperature dependence of a touch mode capacitive pressure sensor, temperature dependence of material parameters of the sense have been studied. Using Finite Element Method (FEM) to simulate and solve capacitance, the results show that the relation of capacitance and temperature is almost linear in touch state of the sensor. At the same time, temperature sensitivities under different pressure are slight difference, which are 0.0056pF/K and 0.0040pF/K, respectively. Therefore, the high-temperature performance of the sensor is greatly outstanding.

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