Low Temperature Curable Polyimide Film Properties and WLP Reliability Performance with Various Curing Conditions

2017 ◽  
Author(s):  
Yu Chuan Chen ◽  
Katch Wan ◽  
Chen An Chang ◽  
Rick Lee
Keyword(s):  
Low Temperature ◽  
Polyimide Film ◽  
Film Properties ◽  
Curing Conditions ◽  
Reliability Performance

scholarly journals Experimental Study on Deformation Behavior and Compressive Strength of Concrete Cast in Steel Tube Arches under Low-Temperature Conditions

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Tuo Shi ◽  
Nianchun Deng ◽  
Xiao Guo ◽  
Wen Xu ◽  
Shi Wang
Keyword(s):  
Compressive Strength ◽  
Low Temperature ◽  
Performance Test ◽  
Large Diameter ◽  
Test Site ◽  
Steel Tube ◽  
Design Strength ◽  
Curing Conditions ◽  
Expansive Agent ◽  
Arch Bridges

Taking the construction of a concrete-filled steel tube (CFST) arch bridge (part of the Sichuan-Tibet Railway) in low temperatures as the test site, firstly the deformation performance test of concrete was carried out. Following this initial testing, measurement of compressive strength and shrinkage performance was conducted in large-diameter CFSTs under a variety of curing conditions. Experimental results showed that the expansion effect of Ca-Mg composite expansive agent in concrete was better than that of other expansive agents at any stage. Under low-temperature curing (0°C), the sampling strength of the large-diameter CFSTs reached 73.5% of the design strength at 28 d in the presence of a nonthermal curing system. The design strength itself was reached, when a curing system involving a thermal insulation film was applied, and use of this film also led to improvements in concrete shrinkage. The results suggested that a Ca-Mg composite expansive agent, combined with an insulation film curing system, should be the technique selected for concrete pumping construction of CFST arch bridges in Tibet.

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

Effect of processing temperature on film properties of ZnO prepared by the aqueous method and related organic photovoltaics and LEDs

2020 ◽  
Vol 7 (15) ◽  
pp. 2809-2817
Author(s):  
Jiaqi Zhang ◽  
Hengxiang Yang ◽  
Xiaoyu Zhang ◽  
Maurizio Morbidoni ◽  
Claire H. Burgess ◽  
...  
Keyword(s):  
Low Temperature ◽  
Organic Photovoltaics ◽  
Processing Temperature ◽  
Film Properties ◽  
Aqueous Method ◽  
Green Strategy

The aqueous processed ZnO ETLs enable low-temperature, simple and green-strategy fabrication for efficient OPVs and OLEDs.

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD

2016 ◽  
Vol 18 (18) ◽  
pp. 13033-13044 ◽  
Author(s):  
B. B. Sahu ◽  
Y. Y. Yin ◽  
T. Tsutsumi ◽  
M. Hori ◽  
Jeon G. Han
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Chemistry ◽  
Correlation Study ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Plasma Parameters ◽  
Film Properties

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.

scholarly journals Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

1999 ◽  
Vol 14 (5) ◽  
pp. 2043-2052 ◽  
Author(s):  
Xiaomeng Chen ◽  
Gregory G. Peterson ◽  
Cindy Goldberg ◽  
Gerry Nuesca ◽  
Harry L. Frisch ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tantalum Nitride ◽  
Process Window ◽  
Copper Metallization ◽  
Film Properties ◽  
Reaction Regime ◽  
Integrated Circuitry

A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNxfrom the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNxwith contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.

Low Temperature Copper Deposition by PE-ALD

2009 ◽  
Vol 1195 ◽  
Author(s):  
Jiajun Mao ◽  
Eric Eisenbraun ◽  
Vincent Omarjee ◽  
Clement Lanslot ◽  
Christian Dussarrat
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Deposition Rate ◽  
Electrochemical Deposition ◽  
High Aspect Ratio ◽  
Seed Layer ◽  
Surface Coverage ◽  
Copper Deposition ◽  
Process Conditions ◽  
Film Properties

AbstractWith the continuing scaling in device sizes, sputtered copper is not expected to achieve the conformality and surface coverage requirements to be an effective seed layer for electrochemical deposition in sub-32nm features. Additionally, the metallization demands of high aspect ratio TSVs in 3D-architectures pose similar challenges. In this work, a manufacturable low temperature Cu PE-ALD process has been developed employing a novel O and F-free precursor. The ALD process conditions are correlated with key film properties, including deposition rate, composition, step coverage, and resistivity. Additionally, the influence of precursor substituents on the deposition rate and preliminary integration performance are discussed.

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