Effect of processing temperature on film properties of ZnO prepared by the aqueous method and related organic photovoltaics and LEDs

2020 ◽  
Vol 7 (15) ◽  
pp. 2809-2817
Author(s):  
Jiaqi Zhang ◽  
Hengxiang Yang ◽  
Xiaoyu Zhang ◽  
Maurizio Morbidoni ◽  
Claire H. Burgess ◽  
...  
Keyword(s):  
Low Temperature ◽  
Organic Photovoltaics ◽  
Processing Temperature ◽  
Film Properties ◽  
Aqueous Method ◽  
Green Strategy

The aqueous processed ZnO ETLs enable low-temperature, simple and green-strategy fabrication for efficient OPVs and OLEDs.

Development of Low-Temperature Sintering Cu Nanoparticles

2013 ◽  
Vol 1513 ◽  
Author(s):  
Toshitaka Ishizaki ◽  
Ryota Watanabe ◽  
Kunio Akedo ◽  
Toshikazu Satoh
Keyword(s):  
Electron Microscopy ◽  
Fatty Acids ◽  
Low Temperature ◽  
Decanoic Acid ◽  
Inert Atmosphere ◽  
Processing Temperature ◽  
Low Temperature Sintering ◽  
Cu Nanoparticles ◽  
Transmission Electron ◽  
Oleyl Amine

ABSTRACTCu nanoparticles capped with fatty acids and amines were developed as low-temperature sintering materials. The fatty acids and amines used were decanoic acid + decyl amine (C10) and oleic acid + oleyl amine (C18), respectively. The synthesized Cu nanoparticles were analyzed using X-ray diffraction, transmission electron microscopy, and thermogravimetric and differential thermal analysis. Because both of the capping layers could be decomposed at temperatures lower than 300°C even under an inert atmosphere, bonding and sintering experiments could be carried out in the absence of oxygen to prevent the oxidation of the Cu nanoparticles. The sintered structures were observed using scanning electron microscopy. The shear strengths of Cu plates bonded using the C18 Cu nanoparticles were larger than those of plates bonded using the C10 Cu nanoparticles. At 300°C, the strength was higher than 30 MPa, and of the same order as ordinary high-temperature solders, even though the processing temperature was low. The resistivity of a film sintered using the C18 Cu nanoparticles was 12 μΩcm at 300°C, which was lower than the values reported in previous studies.

Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

1990 ◽  
Vol 187 ◽  
Author(s):  
C. S. Chang ◽  
J. C. Wang ◽  
L. C. Kuo
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Optimal Condition ◽  
Deposition Rate ◽  
Oxygen Pressure ◽  
Electron Beam Evaporation ◽  
Film Properties ◽  
High Quality ◽  
Ito Films

AbstractAn electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

scholarly journals Analysis of Heat Transfer Mechanism for Shelf Vacuum Freeze-Drying Equipment

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hong-Ping Cheng ◽  
Shian-Min Tsai ◽  
Chin-Chi Cheng
Keyword(s):  
Heat Transfer ◽  
Heat Exchange ◽  
Low Temperature ◽  
Temperature Gradient ◽  
Freeze Drying ◽  
Heat Transfer Fluid ◽  
Processing Temperature ◽  
Fluid Temperature ◽  
Three Dimension ◽  
Flow Rates

Vacuum freeze-drying technology is applicable to the process of high heat-sensitive products. Due to the long drying period and extremely low processing temperature and pressure, the uniform and efficiency of heat transfer fluid temperature in shelf are critical for product quality. Therefore, in this study, the commercial computer fluid dynamics (CFD) software, FLUENT, was utilized for three-dimension numerical simulation of the shelf vacuum freeze-drying process. The influences of different inlet and outlet positions for shelves on the uniformity of the flow rate and temperature were discussed. Moreover, it explored the impacts on the temperature gradient of shelves after heat exchange of different flow rates and low temperature materials. In order to reduce the developing time and optimize the design, the various secondary refrigerants in different plies of shelves were investigated. According to the effect of heat exchange between different flow rates and low temperature layer material shelves on the temperature gradient of shelves surface, the minimum temperature gradient was 20 L/min, and the maximum was 2.5 L/min.

Low-Temperature Growth of Nanocrystalline CuO Thin Films on Si by Aqueous Method

2016 ◽  
Vol 11 (5) ◽  
pp. 603-606
Author(s):  
Naisen Yu ◽  
Dapeng Dong ◽  
Rui Yang ◽  
Lu Chen ◽  
Yuyanyao Yang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Aqueous Method

The role of plasma chemistry on functional silicon nitride film properties deposited at low-temperature by mixing two frequency powers using PECVD

2016 ◽  
Vol 18 (18) ◽  
pp. 13033-13044 ◽  
Author(s):  
B. B. Sahu ◽  
Y. Y. Yin ◽  
T. Tsutsumi ◽  
M. Hori ◽  
Jeon G. Han
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Plasma Chemistry ◽  
Correlation Study ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Dual Frequency ◽  
Plasma Parameters ◽  
Film Properties

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.

Ultraviolet Photodetector Based on ITO/MgO/ZnO Structure Grown by Hydrothermal Process

2018 ◽  
Vol 18 (12) ◽  
pp. 8399-8402
Author(s):  
Yunfeng Wu ◽  
Naisen Yu ◽  
Haiying Du ◽  
Dongping Liu ◽  
Hongwei Liang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Large Scale ◽  
Low Cost ◽  
Hydrothermal Process ◽  
Ultraviolet Photodetector ◽  
Uv Detector ◽  
Uv Photodetector ◽  
Metal Insulator ◽  
Aqueous Method ◽  
Novel Method

A simple two-step aqueous method was employed to grow MgO nanostructures on ZnO/sapphire at low temperature. The obtained thin MgO nanostructures were uniformly distributed on the surface of ZnO layer and showed the sheet-like structures. Meanwhile, an ultraviolet (UV) photodetector based on ITO/MgO/ZnO structures was fabricated by simple way. The obtained UV detector showed excellent UV sensing properties. This novel method will greatly facilitate fabrication of large-scale metal-insulator-semiconductor with relatively low cost at remarkably low temperature.

scholarly journals Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

1999 ◽  
Vol 14 (5) ◽  
pp. 2043-2052 ◽  
Author(s):  
Xiaomeng Chen ◽  
Gregory G. Peterson ◽  
Cindy Goldberg ◽  
Gerry Nuesca ◽  
Harry L. Frisch ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tantalum Nitride ◽  
Process Window ◽  
Copper Metallization ◽  
Film Properties ◽  
Reaction Regime ◽  
Integrated Circuitry

A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNxfrom the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNxwith contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.

Low temperature and high performance ZnSnO thin film transistors engineered by in-situ thermal manipulation

2022 ◽  
Author(s):  
Wengao Pan ◽  
Xiaoliang Zhou ◽  
Qingping Lin ◽  
Jie Chen ◽  
Lei Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Cost ◽  
High Mobility ◽  
Processing Temperature ◽  
Practical Application ◽  
Thermal Manipulation

Thin film transistors (TFT) with low cost, high mobility and low processing temperature are key enablers for practical application, which are always contradictory. In this work, we achieved high performance...

Sign in / Sign up

Export Citation Format

Share Document