scholarly journals Failure mechanisms and color stability in light-emitting diodes during operation in high-temperature environments in presence of contamination

2015 ◽  
Author(s):  
Pradeep Lall ◽  
Hao Zhang ◽  
Lynn Davis
Keyword(s):  
High Temperature ◽  
Light Emitting Diodes ◽  
Failure Mechanisms ◽  
Color Stability ◽  
Light Emitting

Investigation of device failure mechanisms in polymer light-emitting diodes

1997 ◽  
Vol 85 (1-3) ◽  
pp. 1213-1214 ◽  
Author(s):  
Ramesh K. Kasim ◽  
Yang Cheng ◽  
Martin Pomerantz ◽  
Ronald L. Elsenbaumer
Keyword(s):  
Light Emitting Diodes ◽  
Failure Mechanisms ◽  
Light Emitting ◽  
Device Failure ◽  
Polymer Light Emitting Diodes

A study of negative-thermal-quenching (Ba/Ca)AlSi5O2N7:Eu2+ phosphors

2021 ◽  
Author(s):  
Hongping Ma ◽  
Shixu Tao ◽  
Youjie Hua ◽  
Jun Zheng ◽  
Luyi Lou ◽  
...  
Keyword(s):  
High Temperature ◽  
Light Emitting Diodes ◽  
Thermal Quenching ◽  
Luminous Intensity ◽  
Light Emitting ◽  
Temperature Resistance ◽  
High Temperature Resistance ◽  
New Generation

Phosphor is an important part of the new generation of light-emitting diodes (LEDs), which requires high luminous intensity and high-temperature resistance. In this study, a series of excellent (Ba1-x-yCax)AlSi5O2N7:yEu2+ phosphors...

Novel yellow thermally activated delayed fluorescence emitters for highly efficient full-TADF WOLEDs with low driving voltages and remarkable color stability

2019 ◽  
Vol 43 (34) ◽  
pp. 13339-13348 ◽  
Author(s):  
Tingting Huang ◽  
Di Liu ◽  
Deli Li ◽  
Wenfeng Jiang ◽  
Jingyang Jiang
Keyword(s):  
Light Emitting Diodes ◽  
Color Stability ◽  
Delayed Fluorescence ◽  
Organic Light Emitting Diodes ◽  
Thermally Activated Delayed Fluorescence ◽  
Light Emitting ◽  
Thermally Activated ◽  
Highly Efficient ◽  
Organic Light

Novel yellow thermally activated delayed fluorescence (TADF) emitters were developed for full-TADF white organic light-emitting diodes with a stable CRI of 72 and efficiencies of 48.22 cd A−1 and 20.16%.

High temperature light emitting diodes for 8–12 μm spectral range

2000 ◽  
Vol 41 (6) ◽  
pp. 373-378 ◽  
Author(s):  
V Malyutenko ◽  
A Melnik ◽  
O Malyutenko
Keyword(s):  
High Temperature ◽  
Spectral Range ◽  
Light Emitting Diodes ◽  
Light Emitting

Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

1990 ◽  
Vol 184 ◽  
Author(s):  
H. S. Hajghassem ◽  
W. D. Brown ◽  
J. R. Yeargan ◽  
J. G. Williams
Keyword(s):  
High Temperature ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Neutron Fluence ◽  
Light Output ◽  
Infrared Light ◽  
High Temperature Annealing ◽  
Light Emitting ◽  
Current Voltage ◽  
Operating Current

ABSTRACTThis paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

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