Vacuum ultraviolet (VUV) and vapor-combined surface modification for hybrid bonding of SiC, GaN, and Si substrates at low temperature and atmospheric pressure

2015 ◽  
Author(s):  
Akitsu Shigetou ◽  
Jun Mizuno ◽  
Shuichi Shoji
Keyword(s):  
Surface Modification ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Vacuum Ultraviolet ◽  
Si Substrates

Nanoindentation of Vacuum Ultraviolet Light-Irradiated Poly(methylmethacrylate) Substrates

2002 ◽  
Vol 750 ◽  
Author(s):  
Atsushi Hozumi ◽  
Yoshiyuki Yokogawa ◽  
Tetsuya Kameyama ◽  
Yunying Wu ◽  
Hiroyuki Sugimura ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Surface Modification ◽  
Atmospheric Pressure ◽  
Vacuum Ultraviolet ◽  
High Wear Resistance ◽  
Wear Depth ◽  
Pmma Substrate ◽  
Nanomechanical Properties ◽  
Carbon Carbon Bonds ◽  
Pmma Sample

ABSTRACTSurface modification of poly(methylmethacrylate) (PMMA) substrates has been demonstrated using an excimer lamp radiating vacuum ultraviolet (VUV) light of 172 nm in wavelength. In this study, we have particularly focused on the effects of atmospheric pressure during VUV irradiation. Each of the substrates was photoirradiated with VUV light under a pressure of 10, 103 or 105 Pa. Changes in nanomechanical properties of the VUV-irradiated sample surfaces were studied based on a scratching test using a nanoindenter. The wear-depth of the PMMA sample treated at 105 Pa was about 137.0 nm, which was much larger than the wear-depth of an untreated PMMA substrate (63.3 nm). On the contrary, when samples were prepared with VUV irradiation conducted at 10 and 103 Pa, their wear-depths markedly decreased down to about 2.2 and 12.5 nm, respectively. The sample treated at 10 Pa was particularly wear-resistant. This high wear-resistance was attributable to the formation of new carbon-carbon bonds such as C=C bonds on the PMMA surfaces.

High Speed Surface Modification in Fine-Pitch Package Substrate Manufacturing Process with High Density 60 Hz Nonequilibrium Atmospheric Pressure Plasma

2012 ◽  
Vol 1401 ◽  
Author(s):  
Yoshiyuki Iwata ◽  
Hajime Sakamoto ◽  
Keigo Takeda ◽  
Masaru Hori
Keyword(s):  
Surface Modification ◽  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
High Speed ◽  
Vacuum Ultraviolet ◽  
Atmospheric Pressure Plasma ◽  
Oxygen Radical ◽  
Material Surface ◽  
Mixing Ratio ◽  
Pressure Plasma

ABSTRACTThis study examined surface modification of solder resist and dry film resist using 60 Hz nonequilibrium atmospheric pressure plasma with O2/N2 mixing gas. Results show that the plasma discharge condition at O2/N2 mixing ratio of 0.1% was the best for surface modification for both materials, and the surfaces were modified sufficiently at 0.45 m/min package substrate transportation speed. From the plasma diagnostics by Vacuum Ultraviolet Absorption Spectroscopy (VUVAS) and Optical Emission Spectroscopy (OES), it was found that the behaviors of the oxygen radical density and NO-γ emission intensity correlate strongly with surface modification. The extremely high oxygen radical density around 4.7 × 1013 cm-3 was obtained at O2/N2 mixing ratio of 0.1%. The electron density was 2.5 × 1015 cm-3 that is two digits more than that of the conventional atmospheric pressure plasma such as Dielectric Barrier Discharge (DBD). The solder resist surface with the plasma treatment was analyzed by X-ray Photoelectron Spectroscopy (XPS), and it was clarified that material surface was modified by hydrophilic group generation owing polymer chain oxidation with oxygen radical.

Near-surface modification of optical properties of fused silica by low-temperature hydrogenous atmospheric pressure plasma

2012 ◽  
Vol 37 (4) ◽  
pp. 566 ◽  
Author(s):  
Christoph Gerhard ◽  
Daniel Tasche ◽  
Stephan Brückner ◽  
Stephan Wieneke ◽  
Wolfgang Viöl
Keyword(s):  
Optical Properties ◽  
Surface Modification ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Fused Silica ◽  
Near Surface ◽  
Pressure Plasma

scholarly journals Low Temperature Microplasma Jet at Atmospheric Pressure for Inducing Surface Modification on Polyethylene Substrates

2014 ◽  
Vol 4 (3A) ◽  
pp. 1-7 ◽  
Author(s):  
E. C. B. B. Aragão ◽  
J. C. Nascimento ◽  
A. D. Fernandes ◽  
F. T. F. Barbosa ◽  
D. C. Sousa ◽  
...  
Keyword(s):  
Surface Modification ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Inducing Surface

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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