Cost comparison for flip chip, gold wire bond, and copper wire bond packaging

2010 ◽  
Author(s):  
Chet A. Palesko ◽  
E. Jan Vardaman
Keyword(s):  
Flip Chip ◽  
Copper Wire ◽  
Gold Wire ◽  
Cost Comparison ◽  
Wire Bond

Wire Bond Shear Test Simulation on Sharp Groove Surface Bond Pad

2012 ◽  
Vol 622-623 ◽  
pp. 647-651 ◽  
Author(s):  
Z. Sauli ◽  
V. Retnasamy ◽  
S. Taniselass ◽  
A.H.M. Shapri ◽  
R. Vairavan
Keyword(s):  
Stress Response ◽  
Shear Test ◽  
Copper Wire ◽  
Gold Wire ◽  
Shear Tests ◽  
Groove Surface ◽  
Wire Bond ◽  
Packaging Industry ◽  
Semiconductor Packaging ◽  
Surface Bond

Wire bonding process is first level interconnection technology used in the semiconductor packaging industry. The wire bond shear tests are used in the industry to examine the bond strength and reliability of the bonded wires. Hence, in this study thesimulation on wire bond shear test is performed on a sharp groove surface bond pad. ANSYS ver 11 was used to perform the simulation. The stress response of the bonded wires are investigated.The effects of three wire materials gold(Au), aluminum(Al) and copper(Cu) on the stress response during shear test were examined. The simulation results showed that copper wire bond induces highest stress and gold wire exhibits the least stress response.

Reliability Assessment of Cu-Al WB Under High Temperature and High Voltage Bias Application

2020 ◽  
Author(s):  
Pradeep Lall ◽  
Sungmo Jung
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Galvanic Corrosion ◽  
Copper Wire ◽  
Ionic Transport ◽  
Gold Wire ◽  
Process Window ◽  
Voltage Bias ◽  
Wire Bond ◽  
Wire Bonds

Abstract Electronics in automotive underhood environments may be subjected to high temperature in the range of 125–200°C. Transition to electric vehicles has resulted in need for electronics capable of operation under high voltage bias. Automotive electronics has simultaneously transitioned to copper wire-bond from gold wire-bond for first-level interconnections. Copper has a smaller process window and a higher propensity for corrosion in comparison with gold wire bonds. There is scarce information on the reliability of copper wire bonds in presence of high voltage bias under operation at high temperature. In this paper, a multiphysics model for micro galvanic corrosion in the presence of chlorine is introduced. The diffusion cell is used to measure the diffusivity of chlorine in different pH values and different temperatures. Diffusivity measurements are incorporated into the 3D ionic transport model to study the effect of different environmental factors on the transport rate of chlorine. The tafel parameters for copper, aluminum and intermetallics have been extracted through measurements of the polarization curves. The multiple physics of ionic transport in presence of concentration gradient, potential gradient is coupled with the galvanic corrosion.

Resistance Spectroscopy Based Assessment of Degradation in Cu-Al Wire Bond Interconnects

2013 ◽  
Author(s):  
Pradeep Lall ◽  
Yihua Luo
Keyword(s):  
Health Management ◽  
Copper Wire ◽  
Wheatstone Bridge ◽  
Gold Wire ◽  
Remaining Useful Life ◽  
Thermal Cycles ◽  
Leading Indicator ◽  
Wire Bond ◽  
Useful Life ◽  
The Wire

Escalation of the expense of gold has resulted in industry interest in use of copper as alternative wire bonds interconnect material. Copper wire has the advantage of lower price and comparable electrical resistance to gold wire. In this paper, 32-pin copper-aluminum wire bond chip scale packages are aged at three types of environment conditions separately. Environmental conditions included: 200°C for 10 days, 85°C and 85% RH for 8 weeks and −40°C to 125°C for 500 thermal cycles. The resistances of the wire bond are obtained every 24 hours for 200°C environment, every 7 days for 85C/85RH environment and every 5 days (50 thermal cycles) for the thermal cycling environment. A leading indicator has been developed in order to monitor the progression effect of the different thermal aging condition on the package and prognosticate remaining useful life based on the resistance spectroscopy. The Cu-Al wire bond resistance has been measured using a modified Wheatstone bridge. It has been shown previously that precise resistance spectroscopy is able to offer the failure of a leading indicator prior to the traditional definition of failure. The prognostic health management is qualified to be an efficient and accuracy tool for assessment of the remaining life of the wire bond. The ability to predict the remaining useful life of Cu-Al wire bond provides several advantages, including increasing safety by providing warning ahead of time before the failure.

High Temperature Storage and HAST Reliability of Copper-Aluminum Wirebond Interconnects

2014 ◽  
Author(s):  
Pradeep Lall ◽  
Shantanu Deshpande ◽  
Luu Nguyen
Keyword(s):  
High Temperature ◽  
Copper Wire ◽  
Gold Wire ◽  
Wire Bonding ◽  
Remaining Useful Life ◽  
Thermal Resistivity ◽  
Wire Bond ◽  
Trade Offs ◽  
Marquardt Algorithm ◽  
Temperature And Humidity

Gold wire bonding has been widely used as first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for alternative to the gold wire used in wire bonding and the transition to copper wire bonding technology. Potential advantages of transition to Cu-Al wire bond system includes low cost of copper wire, lower thermal resistivity, lower electrical resistivity, higher deformation strength, damage during ultrasonic squeeze, and stability compared to gold wire. However, the transition to the copper wire brings along some trade-offs including poor corrosion resistance, narrow process window, higher hardness, and potential for cratering. Formation of excessive Cu-Al intermetallics may increase electrical resistance and reduce the mechanical bonding strength. Current state-of-art for studying the Cu-Al system focuses on accumulation of statistically significant number of failures under accelerated testing. In this paper, a new approach has been developed to identify the occurrence of impending apparently-random defect fall-outs and pre-mature failures observed in the Cu-Al wirebond system. The use of intermetallic thickness, composition and corrosion as a leading indicator of failure for assessment of remaining useful life for Cu-al wirebond interconnects has been studied under exposure to high temperature and temperature-humidity. Damage in wire bonds has been studied using x-ray Micro-CT. Microstructure evolution was studied under isothermal aging conditions of 150°C, 175°C, and 200°C till failure. Activation energy was calculated using growth rate of intermetallic at different temperatures. Effect of temperature and humidity on Cu-Al wirebond system was studied using Parr Bomb technique at different elevated temperature and humidity conditions (110°C/ 100%RH, 120°C/ 100%RH, 130°C/ 100%RH) and failure mechanism was developed. The present methodology uses evolution of the IMC thickness, composition in conjunction with the Levenberg-Marquardt algorithm to identify accrued damage in wire bond subjected to thermal aging. The proposed method can be used for quick assessment of Cu-Al parts to ensure manufactured part consistency through sampling.

Measurement of Ion-Mobility in Copper-Aluminum Wirebond Electronics Under Operation at High Voltage and High Temperature

2017 ◽  
Author(s):  
Pradeep Lall ◽  
Yihua Luo ◽  
Shantanu Deshpande ◽  
Luu Nguyen
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Copper Wire ◽  
Extended Period ◽  
Ionic Mobility ◽  
Gold Wire ◽  
Voltage Bias ◽  
Wire Bond ◽  
Mobility Of Ions ◽  
Copper Aluminum

Transition of ground vehicles to HEV and FEV has necessitated the operation of electronics in automotive underhood at high voltage bias and high temperature for extended period-of-time. Examples include gate drivers and IGBT modules. A typical automotive benchmark is operation for 10 years and 100,000 miles. Simultaneously, the first-level interconnects are migrating to use copper-wire interconnects in place of the previously used gold wire. Copper wire has higher propensity for corrosion and a narrower process-bonding window in comparison with gold wire based systems. Exposure to high temperature, humidity and bias influences the mobility of ions in the EMC and thus the contaminant transport to the WB interfaces. Measurements of diffusion behavior of EMCs at high temperature and high voltage bias are not available for readily being used in models. Prior studies have focused on biased humidity tests on wire bonds with the amplitude of the bias being limited up to 3.5Volts. In this paper, a PWM-controlled-gate drive-based test setup is established to study the effect of high voltage (up to 20Volts) on Cu-Al wire bond interconnects. A migration-diffusion cell experiment is designed to quantify the effect of voltage bias on transport of chlorine in EMCs. Diffusion coefficient and ionic mobility of chlorine at different temperatures are obtained. Resistance spectroscopy measurements show the progression of corrosion induced by voltage bias. A corrosion simulation is used to quantify the effect of voltage bias on corrosion rate of Cu-Al wire bond.

Wire Bond Shear Test Simulation on Hemispherical Surface Bond Pad

2012 ◽  
Vol 622-623 ◽  
pp. 643-646 ◽  
Author(s):  
Z. Sauli ◽  
V. Retnasamy ◽  
W.M.W. Norhaimi ◽  
J. Adnan ◽  
M. Palianysamy
Keyword(s):  
Stress Response ◽  
Shear Test ◽  
Copper Wire ◽  
Gold Wire ◽  
Bonding Process ◽  
Wire Bond ◽  
Hemispherical Surface ◽  
Simulation Results ◽  
Semiconductor Packaging ◽  
Surface Bond

Wire bonding process is an interconnection method adopted in the semiconductor packaging manufactory. One of the method used to assess the reliability and bond strength of the bonded wires are wire bond shear test .In this study, simulation on wire bond shear test is done to evaluate the stress response of the bonded wire when sheared on a hemispherical surface bond pad. The contrast between three types of wire material:gold(Au), aluminum(Al) and copper(Cu) were carry out to examine the effects of wire material on the stress response of bonded wire during wire bond shear test. The simulation results showed that copper wire bond induces highest stress and gold wire exhibits the least stress response.

Failure Analysis of Short Faults on Advanced Wire-Bond and Flip-Chip Packages with Scanning SQUID Microscopy

2004 ◽  
Author(s):  
Steve K. Hsiung ◽  
Kevan V. Tan ◽  
Andrew J. Komrowski ◽  
Daniel J. D. Sullivan ◽  
Jan Gaudestad
Keyword(s):  
Magnetic Fields ◽  
Integrated Circuits ◽  
Quantum Interference ◽  
Flip Chip ◽  
Infrared Emission ◽  
Fault Analysis ◽  
Wire Bond ◽  
Overlay Design ◽  
Scanning Squid ◽  
Metal Layers

Abstract Scanning SQUID (Superconducting Quantum Interference Device) Microscopy, known as SSM, is a non-destructive technique that detects magnetic fields in Integrated Circuits (IC). The magnetic field, when converted to current density via Fast Fourier Transform (FFT), is particularly useful to detect shorts and high resistance (HR) defects. A short between two wires or layers will cause the current to diverge from the path the designer intended. An analyst can see where the current is not matching the design, thereby easily localizing the fault. Many defects occur between or under metal layers that make it impossible using visible light or infrared emission detecting equipment to locate the defect. SSM is the only tool that can detect signals from defects under metal layers, since magnetic fields are not affected by them. New analysis software makes it possible for the analyst to overlay design layouts, such as CAD Knights, directly onto the current paths found by the SSM. In this paper, we present four case studies where SSM successfully localized short faults in advanced wire-bond and flip-chip packages after other fault analysis methods failed to locate the defects.

Packaging Approach for Integrating 40/45-nm ELK Devices Into Wire Bond and Flip-Chip Packages

2011 ◽  
Vol 1 (12) ◽  
pp. 1923-1933 ◽  
Author(s):  
Tan Hua Hong ◽  
John Beleran ◽  
Koh Y. S. Drake ◽  
Ong P. L. Wilson ◽  
Gaurav Mehta ◽  
...  
Keyword(s):  
Flip Chip ◽  
Wire Bond
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