Electrical characterization of wafer level fan-out (WLFO) using film substrate for low cost millimeter wave application

Author(s):  
SeungJae Lee ◽  
SangWon Kim ◽  
Nozad Karim ◽  
Brett Dunlap ◽  
BooYang Jung ◽  
...  
2013 ◽  
Vol 59 (3) ◽  
pp. 201 ◽  
Author(s):  
Sandeep Chaturvedi ◽  
GSai Saravanan ◽  
MahadevaK Bhat ◽  
R Muralidharan ◽  
ShibanK Koul ◽  
...  

2020 ◽  
Author(s):  
Lyle Jones

The electrical Testing and Characterization of the devices built under research conditions on silicon wafers, diced wafers, or package parts have hampered research since the beginning of integrated circuits. The challenges of performing electrical characterization on devices are to acquire useful and accurate data, the ease of use of the test platform, the portability of the test equipment, the ability to automate quickly, to allow modifications to the platform, the ability to change the configuration of the Device Under Test (DUT) or the Memristor Based Design (MBD), and to do this within budget. The devices that this research is focused on are memristors with unique test challenges. Some of the tests performed on memristors are Voltage sweeps, pulsing of Voltages, and threshold Voltages. Standard methods of testing memristors usually require hands-on experience, multiple bulky work stations, and hours of training. This work reports a novel, low-cost, portable test and characterization platform for many types of memristors with a voltage range from -10V to +10V, which is portable, low-cost, built with off-the-shelf components, and with configurability through software and hardware. To demonstrate the performance of the platform, the platform was able to take a virgin memristor from “forming” to operation voltages, and then incrementally change resistances by Voltage Pulsing. The platform within this work allows the researcher flexibility in electrical characterization by being able to accept many memristor types and MBDs, and applying environmental conditions to the MBD, with this flexibility of the platform the productivity of the researcher will increase.


2020 ◽  
Vol 15 (3) ◽  
pp. 1-5
Author(s):  
Antonio Carlos da Costa Telles ◽  
Jair Lins de Emeri ◽  
Saulo Finco ◽  
Luis Eduardo Seixas

The electrical characterization of semiconductors devices, when submitted to ionizing radiation should be done in a large range of currents; however, the instrumentation with this ability is very expensive. This work proposes a low-cost circuit using commercial off-the-shelf components (COTS) that enables the measurement of electrical currents in the order of pA range. The circuit presents an output current that is an amplified version of the current to be measured, using the exponential relationship between currents and voltages in Bipolar Junction Transistors (BJTs) and Metal Oxide Silicon Field Effect Transistors (MOSFETs) when operating in the weak inversion region. Furthermore, a block was introduced in order to compensate the gain’s temperature dependence. The results showed that the operating range for the current that will be measured was more than seven decades using BJTs and five decades by using MOSFETs with a high linearity. The circuit version using MOSFETs was able to measure currents as low as 100 fA. The current gain has also good linearity for over five decades. This circuit has a stable behavior for the range of 20 °C to 40 °C, because of the temperature compensation block.


Measurement ◽  
2009 ◽  
Vol 42 (2) ◽  
pp. 281-289 ◽  
Author(s):  
Alessandro Cabrini ◽  
Laura Gobbi ◽  
Davide Baderna ◽  
Guido Torelli

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.


1993 ◽  
Vol 316 ◽  
Author(s):  
Fereydoon Namavar ◽  
N.M. Kalkhoran ◽  
A. Cremins

ABSTRACTSilicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.


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