Capacitors on organic modules: a new THB failure mode and method of detection

2009 ◽  
Author(s):  
Wolfgang Sauter ◽  
Jennifer Muncy ◽  
Joseph Ross ◽  
Jeffrey Coffin ◽  
Charles Arvin ◽  
...  
Keyword(s):  
Failure Mode

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

Risk analysis of cutting system under intuitionistic fuzzy environment

2020 ◽  
Vol 1 (1) ◽  
pp. 162-173
Author(s):  
Dinesh Kumar Kushwaha ◽  
◽  
Dilbagh Panchal ◽  
Anish Sachdeva ◽  
◽  
...  
Keyword(s):  
Risk Assessment ◽  
Failure Mode ◽  
Thermal Power ◽  
Failure Detection ◽  
Engineering System ◽  
Effect Analysis ◽  
Intuitionistic Fuzzy ◽  
Mode Effect ◽  
Cutting System ◽  
Failure Mode Effect Analysis

Failure Mode Effect Analysis (FMEA) is popular and versatile approach applicable to risk assessment and safety improvement of a repairable engineering system. This method encompasses various fields such as manufacturing, healthcare, paper mill, thermal power industry, software industry, services, security etc. in terms of its application. In general, FMEA is based on Risk Priority Number (RPN) score which is found by product of probability of Occurrence (O), Severity of failure (S) and Failure Detection (D). As human judgement is approximate in nature, the accuracy of data obtained from FMEA members depend on degree of subjectivity. The subjective knowledge of members not only contains uncertainty but hesitation too which in turn, affect the results. Fuzzy FMEA considers uncertainty and vagueness of the data/ information obtained from experts. In order to take into account, the hesitation of experts and vague concept, in the present work we propose integrated framework based on Intuitionistic Fuzzy- Failure Mode Effect Analysis (IF-FMEA) and IF-Technique for Order Preference by Similarity to Ideal Solution (IF-TOPSIS) techniques to rank the listed failure causes. Failure cause Fibrizer (FR) was found to be the most critical failure cause with RPN score 0.500. IF-TOPSIS has been implemented within IF-FMEA to compare and verify ranking results obtained by both the IF based approaches. The proposed method was presented with its application for examining the risk assessment of cutting system in sugar mill industry situated in western Uttar Pradesh province of India. The result would be useful for the plant maintenance manager to fix the best maintenance schedule for improving availability of cutting system.

Case Study of Electro-Optical Probing Signal with High Signal-Noise Ratio

2019 ◽  
Author(s):  
Ryan Xiao ◽  
William Wang ◽  
Ang Li ◽  
Shengqiu Xu ◽  
Binghai Liu
Keyword(s):  
Failure Mode ◽  
High Signal ◽  
Signal Noise ◽  
Electrical Failure ◽  
Current Path ◽  
Probing Signal ◽  
Optical Probing ◽  
Noise Ratio ◽  
Case Collection

Abstract With the development of semiconductor technology and the increment quantity of metal layers in past few years, backside EFA (Electrical Failure Analysis) technology has become the dominant method. In this paper, abnormally high Signal Noise Ratio (SNR) signal captured by Electro-Optical Probing (EOP)/Laser Voltage Probing (LVP) from backside is shown and the cause of these phenomena are studied. Based on the real case collection, two kinds of failure mode are summarized, and simulated experiments are performed. The results indicate that when a current path from power to ground is formed, the high SNR signal can be captured at the transistor which was on this current path. It is helpful of this consequence for FA to identify the failure mode by high SNR signal.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Combine Nanoprobing Technique with Difference Analysis to Identify Nonvisual Failures

2006 ◽  
Author(s):  
Cha-Ming Shen ◽  
Tsan-Cheng Chuang ◽  
Jie-Fei Chang ◽  
Jin-Hong Chou
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Electrical Characteristic ◽  
The Novel ◽  
Difference Analysis ◽  
Original Idea ◽  
Deductive Method ◽  
Complete Measurement

Abstract This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experiment. The objective is to overcome the difficulty in detecting non-visual, erratic, and complex failure modes. And the original idea of this deductive method is based on the complete measurement of electrical characteristic by nano-probing and difference analysis. The capability to distinguish erratic and invisible defect was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic.

Inter Layer Dielectric Defect Induced High Contact Resistance

2010 ◽  
Author(s):  
Re-Long Chiu ◽  
Jason Higgins ◽  
Toby Kinder ◽  
Juha Tyni ◽  
Sharon Ying ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Failure Analysis ◽  
Failure Mode ◽  
Phosphorus Content ◽  
Moisture Absorption ◽  
Thermal Processes ◽  
Analysis Methods ◽  
Low Phosphorus

Abstract High contact resistance can be caused by moisture absorption in low phosphorus content BPTEOS. Moisture diffused through the TiN glue layer is absorbed by the BPTEOS during subsequent thermal processes resulting in increased contact resistance. This failure mode was studied by combining different failure analysis methods and was confirmed by duplication on experimental wafers.

Case Study and Fault Modeling for Wrong Redundancy Evaluation on DRAM Devices

2007 ◽  
Author(s):  
Martin Versen ◽  
Dorina Diaconescu ◽  
Jerome Touzel
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Fault Modeling ◽  
Mode Analysis ◽  
Root Cause ◽  
Failure Mode Analysis

Abstract The characterization of failure modes of DRAM is often straight forward if array related hard failures with specific addresses for localization are concerned. The paper presents a case study of a bitline oriented failure mode connected to a redundancy evaluation in the DRAM periphery. The failure mode analysis and fault modeling focus both on the root-cause and on the test aspects of the problem.

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