Ultrasonic Anisotropic Conductive Films (ACFs) Bonding of Flexible Substrates on Organic Rigid Boards at Room Temperature

2007 ◽  
Author(s):  
Kiwon Lee ◽  
Hyoung Joon Kim ◽  
Il Kim ◽  
Kyung Wook Paik
Keyword(s):  
Room Temperature ◽  
Flexible Substrates ◽  
Conductive Films

Optical and electrical properties and simulation curves of NiO/Al/NiO transparent conductive film

2019 ◽  
Vol 33 (01) ◽  
pp. 1850417 ◽  
Author(s):  
Shuyun Wang ◽  
Kailin Wen ◽  
Yang Sun ◽  
Xianwu Xiu ◽  
Shuyun Teng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Film ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Light Wavelength ◽  
Conductive Films ◽  
Conductive Film ◽  
Average Transmittance ◽  
Interface Characteristics ◽  
Experimental Data Analysis

In this paper, NiO/Al/NiO transparent conductive films were prepared by magnetron sputtering at the room temperature. Effects of the NiO and Al layers thicknesses on the optical and electrical properties of the NiO/Al/NiO laminated films were analyzed. When the light wavelength falls in range 300–900 nm, with the increase of the NiO and Al layers thicknesses, the transmittance of the laminated film first increases significantly and then decreases slightly, finally tends to be stable. The laminated film obtained the best optical and electrical properties when the NiO layer is 40 nm and the Al layer is 12 nm. The maximum transmittance is 83%, the average transmittance is 77.3%, the film resistivity is [Formula: see text] and the carrier concentration is [Formula: see text]. At the same time, the transmittance of laminated film is simulated by FDTD software. But the simulation curve is different from the experimental data. Analysis results show that, with the NiO dielectric is added on both sides of the metal Al film, the light reflection characteristic of laminated film has been completely different from that of the single Al metal film because of the change of interface characteristics between Al film and NiO film, and the actual luminous transmittance greatly increases.

Deposition of Al-Doped Zinc Oxide by Direct Pulsed Laser Recrystallization at Room Temperature on Various Substrates for Solar Cell Applications

2012 ◽  
Author(s):  
Martin Y. Zhang ◽  
Qiong Nian ◽  
Gary J. Cheng
Keyword(s):  
Thin Film ◽  
Thermal Conductivity ◽  
Solar Cell ◽  
Melting Point ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Flexible Substrates ◽  
Laser Recrystallization ◽  
Azo Thin Film

In this study, a method combining room temperature pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR) are introduced to deposit superior transparent conductive oxide (TCO) layer on low melting point flexible substrates. As an indispensable component of thin film solar cell, TCO layer with a higher quality will improve the overall performance of solar cells. Alumina-doped zinc oxide (AZO), as one of the most promising TCO candidates, has now been widely used in solar cells. However, to achieve optimal electrical and optical properties of AZO on low melting point flexible substrate is challenging. Recently developed direct pulsed laser recrystallization (DPLR) technique is a scalable, economic and fast process for point defects elimination and recrystallization at room temperature. It features selective processing by only heating up the TCO thin film and preserve the underlying substrate at low temperature. In this study, 250 nm AZO thin film is pre-deposited by pulsed laser deposition (PLD) on flexible and rigid substrates. Then DPLR is introduced to achieve a uniform TCO layer on low melting point flexible substrates, i.e. commercialized Kapton polyimide film and micron-thick Al-foil. Both finite element analysis (FEA) simulation and designed experiments are carried out to demonstrate that DPLR is promising in manufacturing high quality AZO layers without any damage to the underlying flexible substrates. Under appropriate experiment conditions, such as 248 nm in laser wavelength, 25 ns in laser pulse duration, 15 laser pulses at laser fluence of 25 mJ/cm2, desired temperature would result in the AZO thin film and activate the grain growth and recrystallization. Besides laser conditions, the thermal conductivity and crystallinity of the substrate serve as additional factors in the DPLR process. It is found that the substrate’s thermal conductivity correlates positively with the AZO crystal size; the substrate’s crystallinity correlates positively with the AZO film’s crystallinity. The thermal expansion of substrate would also contribute to the film tensile stress after processed by DPLR technique. The overall results indicate that DPLR technique is useful and scalable for flexible solar cell manufacturing.

scholarly journals Highly Sensitive InOxOzone Sensing Films on Flexible Substrates

2009 ◽  
Vol 2009 ◽  
pp. 1-5 ◽  
Author(s):  
G. Kiriakidis ◽  
K. Moschovis ◽  
I. Kortidis ◽  
R. Skarvelakis
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Air Conditioning ◽  
Room Temperature ◽  
Growth Conditions ◽  
Flexible Substrates ◽  
Dc Magnetron Sputtering ◽  
Surface Cracking ◽  
Highly Sensitive ◽  
Extended Surface

InOxthin films with a thickness of the order of 100 nm were grown by dc magnetron sputtering on glass, Si and flexible (PET) substrates. The electrical conductivity ofInOxthin films exhibited a change of two orders of magnitude during photoreduction with ultraviolet light and subsequent oxidation in ozone concentrations from 2370 to 15 ppb, at room temperature. Optical transparency of over 85% for all substrates was maintained. Film structural and ozone sensing properties were analyzed. Surface morphology investigations carried out by SEM for films on PET substrates showed extended surface cracking for bending angles beyond40∘. Optimization of growth conditions has led to films with extremely low detection levels for ozone down to 15 ppb at room temperature, demonstrating the wide prospective of utilizing these metal oxides as gas sensors on flexible substrates for a variety of automotive and air-conditioning applications.

Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

2014 ◽  
Vol 556 ◽  
pp. 155-159 ◽  
Author(s):  
Yu Xiao ◽  
Fangyuan Gao ◽  
Guobo Dong ◽  
Tingting Guo ◽  
Qirong Liu ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
Flexible Substrates ◽  
Facing Target Sputtering ◽  
Tin Oxide Films

Copper conductive lines on flexible substrates fabricated at room temperature

2016 ◽  
Vol 4 (15) ◽  
pp. 3274-3280 ◽  
Author(s):  
Cyuan-Jhang Wu ◽  
Yu-Jane Sheng ◽  
Heng-Kwong Tsao
Keyword(s):  
Electrical Conductivity ◽  
Mechanical Strength ◽  
Room Temperature ◽  
Flexible Substrates

Conductive Cu patterns fabricated at room temperature possess good flexibility, mechanical strength, and electrical conductivity.

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