Thin film mesh: a novel approach for noise reduction in high density and high-speed single chip packages

Author(s):  
S.K. Ray ◽  
H. Hamel ◽  
H. Stoller
1992 ◽  
Vol 15 (4) ◽  
pp. 465-477 ◽  
Author(s):  
G.-W. Pan ◽  
J.A. Prentice ◽  
S.K. Zahn ◽  
A.J. Staniszewski ◽  
W.L. Walters ◽  
...  

1989 ◽  
Vol 154 ◽  
Author(s):  
J. Tony Pan ◽  
Steve Poon

AbstractHigh density thin film interconnects are expected to be widely used for multi-chip module application to accommodate next generation high I/O and high speed integrated circuits. These interconnects typically use polyimide as the dielectric, and aluminum or copper (with protective overcoat) as the conductor. The interconnects are typically built on silicon or alumina substrates. Large film stress occurs due to the high processing temperature required to cure polyimide and due to the mismatch in thermal coefficients of expansion (TCE) between the film materials and substrate materials. This work studies film stress for these materials.An instrument which measures thin film stress in-situ at temperatures between 25 and 450°C was used to characterize the stress in polyimide, nickel, and copper films. Two substrate materials, silicon and sapphire, were used in order to extract the TCE and elastic modulus for each film material. Three polyimide materials were evaluated. One of the polyimides studied showed complete stress relaxation at temperatures above 300°C and was almost completely elastic upon heating and cooling between 25 and 300°C. The TCE was calculated to be 41×10−6/°C and the biaxial elastic modulus was 4.0×109 Pascal. The nickel had very low stress asplated, however, high tensile stress was observed after 350°C annealing as a result of TCE mismatch. After first annealing, the nickel was almost completely elastic upon cooling and repeated heating and cooling between 25 and 350°C. Copper, on the other hand, was not completely elastic under similar thermal treatments. High thermal stress caused plastic deformation to occur in copper films. The room temperature stress in copper film after 350°C annealing depended on yield strength instead of TCE mismatch. The stress in these materials and its effects on processing and reliability for high density interconnect will be reported.


1986 ◽  
Vol 72 ◽  
Author(s):  
Amitabh Das ◽  
R. Messier ◽  
T. R. Gururaja ◽  
L. E. Cross

AbstractA novel approach for preparing porous SiO2 thin films by sputter deposi-tion is being developed. The porosity is introduced to reduce the dielectric permittivity of the film to less than 3 for potential use in packaging high speed VLSIs. In the first approach, amorphous silicon is initially deposited to produce a columnar structure with a thickness of 25μm, followed by etching and thermal oxidation to result in closely spaced SiO2 pillars. Capping the structure by a thin film (0.1μm), silica gel layer provides the support for strip line traces. In the second approach, porous SiO2 films are prepared by reactive sputtering. The dielectric properties of the sputter deposited SiO2 films are presented.


2007 ◽  
Vol 127 (10) ◽  
pp. 1033-1042
Author(s):  
Tamio Okutani ◽  
Nobuyuki Nakamura ◽  
Hisato Araki ◽  
Shouji Irie ◽  
Hiroki Osa ◽  
...  
Keyword(s):  

Author(s):  
Denys Rozumnyi ◽  
Jan Kotera ◽  
Filip Šroubek ◽  
Jiří Matas

AbstractObjects moving at high speed along complex trajectories often appear in videos, especially videos of sports. Such objects travel a considerable distance during exposure time of a single frame, and therefore, their position in the frame is not well defined. They appear as semi-transparent streaks due to the motion blur and cannot be reliably tracked by general trackers. We propose a novel approach called Tracking by Deblatting based on the observation that motion blur is directly related to the intra-frame trajectory of an object. Blur is estimated by solving two intertwined inverse problems, blind deblurring and image matting, which we call deblatting. By postprocessing, non-causal Tracking by Deblatting estimates continuous, complete, and accurate object trajectories for the whole sequence. Tracked objects are precisely localized with higher temporal resolution than by conventional trackers. Energy minimization by dynamic programming is used to detect abrupt changes of motion, called bounces. High-order polynomials are then fitted to smooth trajectory segments between bounces. The output is a continuous trajectory function that assigns location for every real-valued time stamp from zero to the number of frames. The proposed algorithm was evaluated on a newly created dataset of videos from a high-speed camera using a novel Trajectory-IoU metric that generalizes the traditional Intersection over Union and measures the accuracy of the intra-frame trajectory. The proposed method outperforms the baselines both in recall and trajectory accuracy. Additionally, we show that from the trajectory function precise physical calculations are possible, such as radius, gravity, and sub-frame object velocity. Velocity estimation is compared to the high-speed camera measurements and radars. Results show high performance of the proposed method in terms of Trajectory-IoU, recall, and velocity estimation.


Author(s):  
J. Gallia ◽  
R. Landers ◽  
Ching-Hao Shaw ◽  
T. Blake ◽  
W. Banzhaf
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