Nonlinear Resistive Electric Field Grading in High-Voltage, High-Power Wide Bandgap Power Module Packaging

2019 ◽  
Author(s):  
Maryam Mesgarpour Tousi ◽  
Mona Ghassemi
Keyword(s):  
Electric Field ◽  
High Voltage ◽  
High Power ◽  
Wide Bandgap ◽  
Power Module

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

scholarly journals Effects of Frequency and Temperature on Electric Field Mitigation Method via Protruding Substrate Combined with Applying Nonlinear FDC Layer in Wide Bandgap Power Modules

Energies ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2022 ◽  
Author(s):  
Maryam Mesgarpour Tousi ◽  
Mona Ghassemi
Keyword(s):  
Electrical Conductivity ◽  
Electric Field ◽  
Metal Layer ◽  
Wide Bandgap ◽  
High Density ◽  
Field Calculation ◽  
Power Module ◽  
Temperature Dependent ◽  
Ac Electrical Conductivity ◽  
Power Modules

Our previous studies showed that geometrical techniques including (1) metal layer offset, (2) stacked substrate design and (3) protruding substrate, either individually or combined, cannot solve high electric field issues in high voltage high-density wide bandgap (WBG) power modules. Then, for the first time, we showed that a combination of the aforementioned geometrical methods and the application of a nonlinear field-dependent conductivity (FDC) layer could address the issue. Simulations were done under a 50 Hz sinusoidal AC voltage per IEC 61287-1. However, in practice, the insulation materials of the envisaged WBG power modules will be under square wave voltage pulses with a frequency of up to a few tens of kHz and temperatures up to a few hundred degrees. The relative permittivity and electrical conductivity of aluminum nitride (AlN) ceramic, silicone gel, and nonlinear FDC materials that were assumed to be constant in our previous studies, may be frequency- and temperature-dependent, and their dependency should be considered in the model. This is the case for other papers dealing with electric field calculation within power electronics modules, where the permittivity and AC electrical conductivity of the encapsulant and ceramic substrate materials are assumed at room temperature and for a 50 or 60 Hz AC sinusoidal voltage. Thus, the big question that remains unanswered is whether or not electric field simulations are valid for high temperature and high-frequency conditions. In this paper, this technical gap is addressed where a frequency- and temperature-dependent finite element method (FEM) model of the insulation system envisaged for a 6.5 kV high-density WBG power module will be developed in COMSOL Multiphysics, where a protruding substrate combined with the application of a nonlinear FDC layer is considered to address the high field issue. By using this model, the influence of frequency and temperature on the effectiveness of the proposed electric field reduction method is studied.

Performance and Durability Validation of Voltage Blocking Technologies to Enable Direct Cooled High-Voltage, High-Power Modules

2021 ◽  
Author(s):  
Ange-Christian Iradukunda ◽  
David Huitink ◽  
Tarek Gebrael ◽  
Nenad Miljkovic
Keyword(s):  
Electric Fields ◽  
High Voltage ◽  
High Power ◽  
Electrical Characterization ◽  
Dielectric Surface ◽  
Surface Coatings ◽  
Dielectric Fluid ◽  
Power Module ◽  
Dielectric Fluids ◽  
And Performance

Abstract Power densification and rising module heat losses cannot be managed by traditional “external-to-case” cooling solutions. This is especially pronounced in high voltage systems, where intervening layers of insulating material between the power devices and cooling solution need to be sufficiently thick to provide adequate voltage isolation. As operating voltages increase, the required thicknesses for these insulating layers become so large that they limit the ability to extract the heat. A direct cooling approach that addresses voltage separation issues represents a unique opportunity to deliver coolant to the hottest regions, while opening up the opportunity for increased scaling of power electronics modules. However technical concerns about long-term performance of coolants and their voltage isolation characteristics coupled with integration challenges impede adoption. Here, the reliability and performance of voltage blocking strategies, namely dielectric fluids and dielectric surface coatings, are examined to advance the feasibility of a direct cooling approach for improved thermal management of high-voltage, high-power module. The breakdown voltage of the dielectric fluid is characterized through relevant temperatures, flow, and electric fields with the ultimate goal of developing design rules for direct integrated cooling schemes. The development and electrical characterization of conformal dielectric surface coatings to provide further protection of the electronics is also undertaken. Results showed the ability for layers of Parylene C to maintain their insulating capacity when subject to E-fields as high as 33.5V/μm.

High-κ Dielectrics for 4H-Silicon Carbide: Present Status and Future Perspective

2021 ◽  
Author(s):  
Amna Siddiqui ◽  
Rabia Yasmin Khosa ◽  
Muhammad Usman
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Properties ◽  
Electric Field ◽  
High Power ◽  
Present Status ◽  
Wide Bandgap ◽  
Future Perspective ◽  
Breakdown Electric Field ◽  
High Breakdown Electric Field

Owing to its superior material and electrical properties such as wide bandgap and high breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power, high temperature, and radiation...

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

scholarly journals Space High-Voltage Power Module

2021 ◽  
Vol 9 ◽  
Author(s):  
Wenjie Zhao ◽  
Yuanyuan Jiang ◽  
Jianchao Wu ◽  
Yonghui Huang ◽  
Yan Zhu ◽  
...  
Keyword(s):  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Electric Propulsion ◽  
High Reliability ◽  
Rapid Development ◽  
Space Environment ◽  
Resonant Circuit ◽  
Power Module ◽  
High Voltage Power Supply

With the rapid development of the world’s aerospace technologies, a high-power and high-reliability space high-voltage power supply is significantly required by new generation of applications, including high-power electric propulsion, space welding, deep space exploration, and space solar power stations. However, it is quite difficult for space power supplies to directly achieve high-voltage output from the bus, because of the harshness of the space environment and the performance limitations of existing aerospace-grade electronic components. This paper proposes a high-voltage power supply module design for space welding applications, which outputs 1 kV and 200 W when the input is 100 V. This paper also improves the efficiency of the high-voltage converter with a phase-shifted full-bridge series resonant circuit, then simulates the optimized power module and the electric field distribution of the high-voltage circuit board.

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