Fast Response Dual Active Bridge Converter with Elimination of Transient DC Offset By Intermediate Asymmetric Modulation

2018 ◽  
Author(s):  
Amit Kumar Bhattacharjee ◽  
S. Milad Tayebi ◽  
Issa Batarseh
Keyword(s):  
Fast Response ◽  
Dc Offset ◽  
Dual Active Bridge ◽  
Asymmetric Modulation

scholarly journals Improved Step Load Response of a Dual-Active-Bridge DC–DC Converter

Electronics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 185 ◽  
Author(s):  
Yifan Zhang ◽  
Xiaodong Li ◽  
Chuan Sun ◽  
Zhanhong He
Keyword(s):  
Change Process ◽  
Experimental Tests ◽  
Reference Points ◽  
Dc Offset ◽  
Dual Active Bridge ◽  
Load Response ◽  
Load Change ◽  
Instantaneous Current ◽  
Transient Control ◽  
Fixed Reference

This paper proposes a fast load transient control for a bidirectional dual-active-bridge (DAB) DC/DC converter. It is capable of maintaining voltage–time balance during a step load change process so that no overshoot current and DC offset current exist. The transient control has been applied for all possible transition cases and the calculation of intermediate switching angles referring to the fixed reference points is independent from the converter parameters and the instantaneous current. The results have been validated by extended experimental tests.

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Compact and efficient gas diffusion electrodes based on nanoporous alumina membranes for microfuel cells and gas sensors

The Analyst ◽  
2020 ◽  
Vol 145 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Wanda V. Fernandez ◽  
Rocío T. Tosello ◽  
José L. Fernández
Keyword(s):  
Response Times ◽  
Hydrogen Oxidation ◽  
Fast Response ◽  
Gas Diffusion ◽  
Limiting Current ◽  
Gas Diffusion Electrodes ◽  
Nanoporous Alumina ◽  
Alumina Membranes ◽  
Current Densities ◽  
Microfuel Cells

Gas diffusion electrodes based on nanoporous alumina membranes electrocatalyze hydrogen oxidation at high diffusion-limiting current densities with fast response times.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

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