Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage

Author(s):  
Seiya Ishiwaki ◽  
Toshihiro Iwaki ◽  
Yusuke Sugihara ◽  
Kimihiro Nanamori ◽  
Masayoshi Yamamoto
Author(s):  
Arkadiusz Glowacki ◽  
Christian Boit ◽  
Richard Lossy ◽  
Joachim Würfl

Abstract Non-degraded and degraded AlGaN/GaN HEMT devices have been characterized electrically and investigated in various operating modes using integral and spectrally resolved photon emission (PE). In degraded devices the PE dependence on the gate voltage differs from the non-degraded devices. Various types of dependencies on the gate voltage have been identified when investigating local degradation sites. PE spectroscopy was performed at various bias conditions. For both devices broad spectra have been obtained in a wavelength regime from visible to near-infrared, including local performance variations. Signatures of the degradation have been determined in the electrical characterization, in integral PE distribution and in the PE spectrum.


2021 ◽  
Vol 13 (7) ◽  
pp. 168781402110349
Author(s):  
Huiqiang Guo ◽  
Mingzhe Li ◽  
Pengfei Sun ◽  
Changfeng Zhao ◽  
Wenjie Zuo ◽  
...  

Rotary-wing unmanned aerial vehicles (UAVs) are widespread in both the military and civilian applications. However, there are still some problems for the UAV design such as the long design period, high manufacturing cost, and difficulty in maintenance. Therefore, this paper proposes a novel design method to obtain a lightweight and maintainable UAV frame from configurable design to detailed design. First, configurable design is implemented to determine the initial design domain of the UAV frame. Second, topology optimization method based on inertia relief theory is used to transform the initial geometric model into the UAV frame structure. Third, process design is considered to improve the manufacturability and maintainability of the UAV frame. Finally, dynamic drop test is used to validate the crashworthiness of the UAV frame. Therefore, a lightweight UAV frame structure composed of thin-walled parts can be obtained and the design period can be greatly reduced via the proposed method.


VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 245-249
Author(s):  
K. Horio ◽  
Y. Mitani ◽  
A. Wakabayashi ◽  
N. Kurosawa

Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I–V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I–V characteristics should be quite different between DC and RF conditions.


2021 ◽  
Vol 11 (5) ◽  
pp. 2210
Author(s):  
Bartosz Lasek ◽  
Przemysław Trochimiuk ◽  
Rafał Kopacz ◽  
Jacek Rąbkowski

This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, an adequate manipulation of the gate voltage is necessary as the gate current should be reduced during the rise of the drain current to avoid overshoots and oscillations. The gate voltage is switched at the right moments on the basis of the feedback signal provided from a measurement of the voltage across the parasitic source inductance of the module. This approach simplifies the circuit and provides no additional power losses in the measuring circuit. The paper contains the theoretical background and detailed description of the active gate driver design. The model of the parasitic-based active gate driver was verified using the double-pulse procedure both in Saber simulations and laboratory experiments. The active gate driver decreases the turn-on energy of a 1.7 kV/325 A SiC MOSFET by 7% comparing to a conventional gate driver (VDS = 900 V, ID = 270 A, RG = 20 Ω). Furthermore, the proposed active gate driver lowered the turn-on cycle time from 478 to 390 ns without any serious oscillations in the main circuit.


2021 ◽  
Vol 143 (4) ◽  
Author(s):  
Erhan Yumuk ◽  
Müjde Güzelkaya ◽  
İbrahim Eksin

Abstract In this study, a novel design method for half-cycle and modified posicast controller structures is proposed for a class of the fractional order systems. In this method, all required design variable values, namely, the input step magnitudes and their application times are obtained as functions of fractional system parameters. Moreover, empirical formulas are obtained for the overshoot values of the compensated system with half-cycle and modified posicast controllers designed utilizing this method. The proposed design methodology has been tested via simulations and ball balancing real-time system. It is observed that the derived formulas are in coherence with outcomes of the simulation and real-time application. Furthermore, the performance of modified posicast controller designed using proposed method is much better than other posicast control method.


2018 ◽  
Vol 41 (6) ◽  
pp. 1761-1771 ◽  
Author(s):  
Baran Hekimoğlu

A novel design method, sine-cosine algorithm (SCA) is presented in this paper to determine optimum proportional-integral-derivative (PID) controller parameters of an automatic voltage regulator (AVR) system. The proposed approach is a simple yet effective algorithm that has balanced exploration and exploitation capabilities to search the solutions space effectively to find the best result. The simplicity of the algorithm provides fast and high-quality tuning of optimum PID controller parameters. The proposed SCA-PID controller is validated by using a time domain performance index. The proposed method was found efficient and robust in improving the transient response of AVR system compared with the PID controllers based on Ziegler-Nichols (ZN), differential evolution (DE), artificial bee colony (ABC) and bio-geography-based optimization (BBO) tuning methods.


2008 ◽  
Vol 44 (2) ◽  
pp. 116 ◽  
Author(s):  
A. Martin ◽  
T. Reveyrand ◽  
M. Campovecchio ◽  
R. Aubry ◽  
S. Piotrowicz ◽  
...  

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