Electrical characterization of POLYHIC, a high density, high frequency, interconnection and packaging medium for digital circuits

2003 ◽  
Author(s):  
J.L. Brandner ◽  
C.C. Faudskar ◽  
M.E. Lindenmeyer ◽  
S.R. Hofmann ◽  
D.B. Buchholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Digital Circuits ◽  
Electrical Characterization ◽  
High Density

High frequency electrical characterization of bst capacitors

1997 ◽  
Vol 15 (1-4) ◽  
pp. 235-243 ◽  
Author(s):  
Rajmo Jammy ◽  
Laura A. Wills
Keyword(s):  
High Frequency ◽  
Electrical Characterization

Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO2/ HfO2 Interface

2004 ◽  
Vol 830 ◽  
Author(s):  
Ch. Sargentis ◽  
K. Giannakopoulos ◽  
A. Travlos ◽  
D. Tsamakis
Keyword(s):  
High Frequency ◽  
Semiconductor Nanocrystals ◽  
Electrical Characterization ◽  
Pt Nanoparticles ◽  
Memory Device ◽  
Memory Devices ◽  
High K ◽  
High K Dielectric ◽  
Mos Device

ABSTRACTMOS memory devices containing semiconductor nanocrystals have drawn considerable attention recently, due to their advantages when compared to the conventional memories. Only little work has been done on memory devices containing metal nanoparticles.We describe the fabrication of a novel MOS device with embedded Pt nanoparticles in the HfO2 / SiO2 interface of a MOS device. Using as control oxide, a high-k dielectric, our device has a great degree of scalability. The fabricated nanoparticles are very small (about 5 nm) and have high density. High frequency C-V measurements demonstrate that this device operates as a memory device.

Electrical characterization of nickel manganite powders in high-frequency range

2013 ◽  
Vol 554 ◽  
pp. 264-270 ◽  
Author(s):  
Goran M. Stojanović ◽  
Goran Kitić ◽  
Slavica M. Savić ◽  
Vesna Crnojević-Bengin
Keyword(s):  
High Frequency ◽  
Electrical Characterization ◽  
High Frequency Range ◽  
Frequency Range

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

2017 ◽  
Vol 121 (24) ◽  
pp. 245302 ◽  
Author(s):  
C. Strobel ◽  
C. A. Chavarin ◽  
J. Kitzmann ◽  
G. Lupina ◽  
Ch. Wenger ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
High Frequency ◽  
Electrical Characterization ◽  
Heterojunction Transistors

Electrical Characterization of 3C-SiC Lateral MOSFETs Fabricated on Heteroepitaxial Films Including High Density of Defects

2015 ◽  
Vol 821-823 ◽  
pp. 733-736 ◽  
Author(s):  
Yukimune Watanabe ◽  
Noriyasu Kawana ◽  
Tsuyoshi Horikawa ◽  
Kiichi Kamimura
Keyword(s):  
Gate Voltage ◽  
Light Emission ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Drain Current ◽  
High Density ◽  
Electrical Characteristics ◽  
Voltage Curve ◽  
Emission Light

We have fabricated lateral MOSFETs on heteroepitaxial 3C-SiC films included high density of defects. Electrical characteristics of 3C-SiC MOSFETs and their temperature dependence were measured to discuss effects of defects on the electrical characteristics. A field effect mobility of 156 cm2/Vs was obtained at room temperature. After applying a drain voltage of 10 V or higher, the drain current - gate voltage curve shifted toward the positive gate voltage. This shift was caused mainly by the charge trapping in the gate oxide. The light emission was observed on the surface of the active MOSFET. The spatial distribution of the emission light from MOSFETs indicated that the charge was generated at the source edge of the gate channel.

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