A novel device design to lower the on-resistance in GaN trench MOSFETs
2014 ◽
Vol 53
(4S)
◽
pp. 04EC08
◽
Keyword(s):
2009 ◽
Vol 15
(4)
◽
pp. 1281-1286
◽
Keyword(s):
SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit
2019 ◽
Vol 963
◽
pp. 655-659
◽
2009 ◽
Vol 105
(1)
◽
pp. 53-65
◽
1995 ◽
Vol 5
(2)
◽
pp. 2103-2106
◽