A novel device design to lower the on-resistance in GaN trench MOSFETs

Author(s):  
Chirag Gupta ◽  
Silvia H. Chan ◽  
Yuuki Enatsu ◽  
Anchal Agarwal ◽  
Stacia Keller ◽  
...  
Keyword(s):  
2014 ◽  
Vol 53 (4S) ◽  
pp. 04EC08 ◽  
Author(s):  
Tomohisa Mizuno ◽  
Yuhta Nakahara ◽  
Yuhsuke Nagata ◽  
Yuhya Suzuki ◽  
Takashi Aoki ◽  
...  

2007 ◽  
Vol 35 (Supplement) ◽  
pp. 178-179
Author(s):  
Toshikazu Hashimoto ◽  
Yohei Sakamaki ◽  
Takashi Saida ◽  
Hiroshi Takahashi

2009 ◽  
Vol 15 (4) ◽  
pp. 1281-1286 ◽  
Author(s):  
Ray-Hua Horng ◽  
Hsiang-Yun Hsiao ◽  
Cheng-Chung Chiang ◽  
Dong-Sing Wuu ◽  
Yu-Li Tsai ◽  
...  

2019 ◽  
Vol 4 (1) ◽  
Author(s):  
Bronwyn Reid-McDermott ◽  
Maryanne Browne ◽  
Dara Byrne ◽  
Paul O’Connor ◽  
Emily O’Dowd ◽  
...  

Abstract Background The design of medical devices impacts upon the performance of healthcare professionals and patient safety. However, multiple devices serving the same function are often available. The purpose of this study was to use simulation as a means of examining the impact of differences in device design on (1) learning of, or attainment of behavioral fluency in, peripheral intravenous cannulation (PIVC); and (2) the generalization, or transfer, of learning on one device to performance of PIVC using an untrained device. Methods A total of 25 final cycle medical students participated in this study which used a randomized two-group design. Participants were randomly assigned to learn PIVC using either a closed PIVC device (a single device which consists of an intravenous cannula with a pre-attached extension tube; n = 14) or an open PIVC device (a two-piece device made up of an intravenous cannula and a separate extension tube which is attached following insertion of the cannula; n = 11). Task analyses were developed for the performance of PIVC using each device. Subsequently, simulation-based fluency training was delivered to both groups using their assigned PIVC device, and continued for each participant until the fluency criterion was achieved. Following achievement of fluency, participants were asked to perform PIVC using the untrained device (i.e., the PIVC device that they had not been trained on). Results All participants in both groups met the fluency criterion, and no significant differences were observed in the number of trials or total training required by groups to achieve fluency. Participants in both groups improved significantly from baseline (M = 11.69) to final training trial (M = 100). However, a significant decrement in performance (M = 81.5) was observed when participants were required to perform PIVC using the untrained device. Conclusions Participants achieved fluency in PIVC regardless of the device used. However, significant decrements in performance were observed when participants were required to perform PIVC using a novel device. This finding supports the need for careful consideration of devices purchased and supplied in the clinical setting, and the need for training prior to the introduction of novel devices or for new staff members.


Author(s):  
Nikoo K. Hazaveh ◽  
Geoffrey W. Rodgers ◽  
J. Geoffrey Chase ◽  
Stefano Pampanin

Viscous fluid damping has been used worldwide to provide energy dissipation to structures during earthquakes. Semi-active dissipation devices have also shown significant potential to re-shape structural hysteresis behaviour and thus provide significant response and damage reduction. However, semi-active devices are far more complex and costly than passive devices, and thus potentially less robust over time. Ideally, a passive device design would provide the unique response behaviour of a semi-active device, but in a far more robust and low-cost device. This study presents the design, development and characterization of a passive Direction and Displacement Dependent viscous damping (D3) device. It can provide viscous damping in any single quadrant of the force-displacement hysteresis loop and any two in combination. Previously, this behaviour could only be obtained with a semi-active device. The D3 device is developed from a typical viscous damper, which is tested to evaluate the baseline of orifice sizing, force levels and velocity dependence. This prototype viscous damper is then modified in clear steps to produce a device with the desired single quadrant hysteresis loop. The overall results provide the design approach, device characterization and validation for this novel device design.


2019 ◽  
Vol 963 ◽  
pp. 655-659 ◽  
Author(s):  
Alexander Bolotnikov ◽  
Peter A. Losee ◽  
Reza Ghandi ◽  
Stacey Kennerly ◽  
Rajib Datta ◽  
...  

This work presents experimental validation of novel device design, based on charge-balance concept expected to expand SiC utilization space for industrial and transportation power conversion applications. Fabricated 2kV and 3kV SiC CB-JBS diodes have surpassed the 1-D BV versus ROn,sp tradeoff with the highest reported breakdown voltage. Static and dynamic characteristics of these new diodes are reported.


2009 ◽  
Vol 105 (1) ◽  
pp. 53-65 ◽  
Author(s):  
WEN-JUN LIAO ◽  
TIAN-LING REN ◽  
YI YANG ◽  
YUAN REN ◽  
XIANG-MING KONG ◽  
...  

ASAIO Journal ◽  
2001 ◽  
Vol 47 (3) ◽  
pp. 244-248 ◽  
Author(s):  
Masami Takagaki ◽  
Patrick M. McCarthy ◽  
Yoshie Ochiai ◽  
Raymond Dessoffy ◽  
Kazuyoshi Doi ◽  
...  

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