Electrical detection of spin accumulation in ferromagnet-semiconductor devices

2006 ◽  
Author(s):  
X. Lou ◽  
C. Adelmann ◽  
M. Furis ◽  
S.A. Crooker ◽  
C.J. Palmstrom ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Spin Accumulation ◽  
Electrical Detection

Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

2016 ◽  
Author(s):  
Paul A. Crowell ◽  
Changjiang Liu ◽  
Sahil Patel ◽  
Tim Peterson ◽  
Chad C. Geppert ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Semiconductor Devices ◽  
Spin Accumulation ◽  
Dynamic Detection

scholarly journals Electrical detection of spin accumulation and spin precession at room temperature in metallic spin valves

2002 ◽  
Vol 81 (27) ◽  
pp. 5162-5164 ◽  
Author(s):  
F. J. Jedema ◽  
M. V. Costache ◽  
H. B. Heersche ◽  
J. J. A. Baselmans ◽  
B. J. van Wees
Keyword(s):  
Room Temperature ◽  
Spin Precession ◽  
Spin Valves ◽  
Spin Accumulation ◽  
Electrical Detection

scholarly journals Electrical Detection of Spin Accumulation in ap-Type GaAs Quantum Well

2003 ◽  
Vol 90 (16) ◽  
Author(s):  
R. Mattana ◽  
J.-M. George ◽  
H. Jaffrès ◽  
F. Nguyen Van Dau ◽  
A. Fert ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Accumulation ◽  
Electrical Detection

Electrical detection of spin accumulation and relaxation in p -type germanium

2017 ◽  
Vol 1 (3) ◽  
Author(s):  
M. Kawano ◽  
M. Ikawa ◽  
K. Santo ◽  
S. Sakai ◽  
H. Sato ◽  
...  
Keyword(s):  
Spin Accumulation ◽  
Electrical Detection ◽  
P Type

scholarly journals Electrical detection of spin transport in lateral ferromagnet–semiconductor devices

2007 ◽  
Vol 3 (3) ◽  
pp. 197-202 ◽  
Author(s):  
Xiaohua Lou ◽  
Christoph Adelmann ◽  
Scott A. Crooker ◽  
Eric S. Garlid ◽  
Jianjie Zhang ◽  
...  
Keyword(s):  
Spin Transport ◽  
Semiconductor Devices ◽  
Electrical Detection

scholarly journals Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

2006 ◽  
Vol 96 (17) ◽  
Author(s):  
X. Lou ◽  
C. Adelmann ◽  
M. Furis ◽  
S. A. Crooker ◽  
C. J. Palmstrøm ◽  
...  
Keyword(s):  
Spin Accumulation ◽  
Electrical Detection ◽  
Semiconductor Interface

scholarly journals Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Changjiang Liu ◽  
Sahil J. Patel ◽  
Timothy A. Peterson ◽  
Chad C. Geppert ◽  
Kevin D. Christie ◽  
...  
Keyword(s):  
Ferromagnetic Resonance ◽  
Electron Spin ◽  
Semiconductor Devices ◽  
Spin Accumulation ◽  
Dynamic Detection

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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