scholarly journals Nonlocal electrical detection of spin accumulation generated by anomalous Hall effect in mesoscopic Ni81Fe19 films

2017 ◽  
Vol 96 (13) ◽  
Author(s):  
Chuan Qin ◽  
Shuhan Chen ◽  
Yunjiao Cai ◽  
Fatih Kandaz ◽  
Yi Ji
2019 ◽  
Vol 477 ◽  
pp. 209-213 ◽  
Author(s):  
Runrun Hao ◽  
Mengqi Xu ◽  
Tie Zhou ◽  
Shishou Kang ◽  
Guolei Liu ◽  
...  

Author(s):  
S. O. Valenzuela ◽  
T. Kimura

This chapter shows how the spin Hall effect (SHE) has been described as a source of spin-polarized electrons for electronic applications without the need for ferromagnets or optical injection. Because spin accumulation does not produce an obvious measurable electrical signal, electronic detection of the SHE proved to be elusive and was preceded by optical demonstrations. Several experimental schemes for the electronic detection of the SHE had been originally proposed, including the use of ferromagnetic electrodes to determine the spin accumulation at the edges of the sample. However, the difficulty of sample fabrication and the presence of spin-related phenomena such as anisotropic magnetoresistance or the anomalous Hall effect in the ferromagnetic electrodes could mask or even mimic the SHE signal in the sample layouts.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  

2021 ◽  
Vol 551 ◽  
pp. 149390
Author(s):  
Weizhen Meng ◽  
Xiaoming Zhang ◽  
Weiwang Yu ◽  
Ying Liu ◽  
Lu Tian ◽  
...  

2020 ◽  
Author(s):  
Xinyang Li ◽  
Weixiao Ji ◽  
Peiji Wang ◽  
Chang-wen Zhang

Half-Dirac semimetals (HDSs), which possess 100% spin-polarizations for Dirac materials, are highly desirable for exploring various topological phases of matter, as low-dimensionality opens unprecedented opportunities for manipulating the quantum state...


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