Fringe field and quantum mechanical effects on capacitance characteristics of sub-0.1 micron MOS devices
2002 ◽
Vol 49
(4)
◽
pp. 619-626
◽
2012 ◽
Vol 2
(1)
◽
pp. 23-32
◽
Keyword(s):
Keyword(s):
1984 ◽
Vol 45
(C3)
◽
pp. C3-229-C3-234
◽
2012 ◽
Vol 9
(3)
◽
pp. 441-447