Fringe field and quantum mechanical effects on capacitance characteristics of sub-0.1 micron MOS devices

Author(s):  
N.G. Gunther ◽  
A.A. Mutlu ◽  
M. Rahman
2016 ◽  
pp. hxw037
Author(s):  
Jonathan P. Black ◽  
Christopher J.W. Breward ◽  
Peter D. Howell

1984 ◽  
Vol 45 (C3) ◽  
pp. C3-229-C3-234 ◽  
Author(s):  
R. Gähler ◽  
R. Golub

Sign in / Sign up

Export Citation Format

Share Document