Selective Growth of Diamond in Thermal Vias for GaN HEMTs

2013 ◽  
Author(s):  
Benjamin Poust ◽  
Vincent Gambin ◽  
Rajinder Sandhu ◽  
Ioulia Smorchkova ◽  
Gregory Lewis ◽  
...  
Keyword(s):  
Selective Growth ◽  
Gan Hemts

Selective Growth of Self-Assembling Si and SiGe Quantum Dots

2014 ◽  
Vol E97.C (5) ◽  
pp. 393-396
Author(s):  
Katsunori MAKIHARA ◽  
Mitsuhisa IKEDA ◽  
Seiichi MIYAZAKI
Keyword(s):  
Quantum Dots ◽  
Selective Growth ◽  
Self Assembling

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Microwave Performance of Ferroelectric-Gated GaN HEMTs

2020 ◽  
Author(s):  
Chunlei Wu ◽  
Jeffrey Smith ◽  
Suman Datta ◽  
Yu Cao ◽  
Jinqiao Xie ◽  
...  
Keyword(s):  
Gan Hemts

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

2021 ◽  
pp. 106931
Author(s):  
Haiyong Wang ◽  
Wei Mao ◽  
Shenglei Zhao ◽  
Jiabo Chen ◽  
Ming Du ◽  
...  
Keyword(s):  
Reverse Blocking ◽  
Gan Hemts
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