GaN HEMT Junction Temperature Dependence on Diamond Substrate Anisotropy and Thermal Boundary Resistance

2012 ◽  
Author(s):  
Horacio C. Nochetto ◽  
Nicholas R. Jankowski ◽  
Avram Bar-Cohen
Keyword(s):  
Temperature Dependence ◽  
Boundary Resistance ◽  
Junction Temperature ◽  
Thermal Boundary Resistance ◽  
Gan Hemt ◽  
Diamond Substrate

Thermally-Optimum Design of GaN-on-SiC HEMT

2015 ◽  
Author(s):  
Caleb A. Holloway ◽  
Avram Bar-Cohen
Keyword(s):  
Thermal Resistance ◽  
Optimum Design ◽  
Power Amplifier ◽  
Layer Structure ◽  
Three Dimensional ◽  
Boundary Resistance ◽  
Junction Temperature ◽  
Thermal Boundary Resistance ◽  
Substrate Thickness ◽  
Design Calculations

Three-dimensional finite-element modeling is used to determine the thermally optimum design of a GaN-on-SiC MMIC power amplifier, with a focus on the parametric influence of the thermal boundary resistance (TBR), epitaxial geometry, and dissipated linear power on the HEMT junction temperature rise. A commercial MMIC power amplifier is used to set the baseline geometry and dimensions. It is found that the frequently neglected Thermal Boundary Resistance (TBR), between the GaN and SiC, not only has a significant influence on the maximum junction temperature, but directly influences the thermally-optimal GaN thickness for the HEMT transistor. The thermally-optimal GaN thickness is a balance between spreading, vertical thermal resistance, and the magnitude of the TBR. As a consequence, it is seen the commonly used, submicron l GaN thicknesses approach optimality only when the TBR values are below 10 m2-K/GW. Additionally, it is observed that increasing the gate pitch and substrate thickness helps to diffuse the flow of heat within the substrate before it proceeds into the cooling solution, resulting in an overall decrease in thermal resistance. The numerical results are used to verify the accuracy of an available analytical solution for a surface heat source on an orthotropic multi-layer structure, albeit with assumed temperature-invariant properties, thus enabling use of this relation in scoping and preliminary design calculations.

The influence of dielectric layer on the thermal boundary resistance of GaN‐on‐diamond substrate

2019 ◽  
Vol 51 (7) ◽  
pp. 783-790 ◽  
Author(s):  
Xin Jia ◽  
Jun‐jun Wei ◽  
Yuechan Kong ◽  
Cheng‐ming Li ◽  
Jinlong Liu ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Diamond Substrate

The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device

2011 ◽  
Author(s):  
Horacio C. Nochetto ◽  
Nicholas R. Jankowski ◽  
Avram Bar-Cohen
Keyword(s):  
Temperature Rise ◽  
Boundary Resistance ◽  
Junction Temperature ◽  
Dominant Factor ◽  
Design Parameters ◽  
Thermal Boundary Resistance ◽  
Substrate Thickness ◽  
High Electron ◽  
The Impact ◽  
Heat Spreading

The present work uses finite element thermal simulations of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) to evaluate the impact of device design parameters on the junction temperature. In particular the effects of substrate thickness, substrate thermal conductivity, GaN thickness, and GaN-to-substrate thermal boundary resistance (TBR) on device temperature rise are quantified. In all cases examined, the TBR was a dominant factor in overall device temperature rise. It is shown that a TBR increase can offset any benefits offered through a more conductive substrate and that there exists a substrate thickness independent of TBR which results in a minimum junction temperature. Additionally, the decrease of GaN thickness only provides a thermal benefit at small TBRs. For TBRs on the order of 10−4 cm2K/W or greater, decreasing the GaN thickness can actually increase the temperature as the heat from the highly localized source is not sufficiently spread out before crossing the GaN-substrate boundary. The tradeoff between GaN heat spreading, substrate heat spreading, and temperature rise across the TBR results in a GaN thickness with minimum total temperature rise. For the TBR values of 10−4 cm2K/W and 10−3 cm2K/W these GaN thicknesses are 0.8 μm and 9 μm respectively.

INTERLAYER THERMAL BOUNDARY RESISTANCE OF WSe2 INVESTIGATED BY USING TIME-DOMAIN THERMOREFLECTANCE MEASUREMENT

2018 ◽  
Author(s):  
Young Gwan Choi ◽  
Chan June Zhung ◽  
Chang Jae Roh ◽  
Hwi In Ju ◽  
Tae Yun Kim ◽  
...  
Keyword(s):  
Time Domain ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

The Role of Interface Vibrational Modes in Thermal Boundary Resistance

2021 ◽  
Author(s):  
Christopher M. Stanley ◽  
Benjamin K. Rader ◽  
Braxton H. D. Laster ◽  
Mahsa Servati ◽  
Stefan K. Estreicher
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
Vibrational Modes

Enhanced performance thermal diode via thermal boundary resistance at nanoscale

2015 ◽  
Vol 107 (8) ◽  
pp. 084103 ◽  
Author(s):  
M. Tovar-Padilla ◽  
L. Licea-Jimenez ◽  
S. A. Pérez-Garcia ◽  
J. Alvarez-Quintana
Keyword(s):  
Boundary Resistance ◽  
Thermal Boundary Resistance
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