A leakage current monitor circuit using silicon on thin BOX MOSFET for dynamic back gate bias control

2015 ◽  
Author(s):  
Hayate Okuhara ◽  
Kimiyoshi Usami ◽  
Hideharu Amano
Keyword(s):  
Leakage Current ◽  
Gate Bias ◽  
Back Gate

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-Gate Bias in a Nanometer CMOS Inverter

2020 ◽  
Vol 13 ◽  
Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Cmos Inverter ◽  
Back Gate ◽  
Random Dopant Fluctuation ◽  
Random Dopant

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.

scholarly journals Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

2018 ◽  
Vol 328 ◽  
pp. 30-34 ◽  
Author(s):  
Qi Wang ◽  
Yaomi Itoh ◽  
Tohru Tsuruoka ◽  
Masakazu Aono ◽  
Deyan He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
Gate Leakage

Study of Total Quantum Efficiency of Lateral SOI PIN Photodiodes with Back-Gate Bias, Intrinsic Length and Temperature Variation

2015 ◽  
Vol 66 (5) ◽  
pp. 101-107 ◽  
Author(s):  
C. Novo ◽  
J. Baptista ◽  
M. Guazzeli da Silveira ◽  
R. Giacomini ◽  
A. Afzalian ◽  
...  
Keyword(s):  
Temperature Variation ◽  
Quantum Efficiency ◽  
Gate Bias ◽  
Back Gate ◽  
Intrinsic Length ◽  
Pin Photodiodes

Investigation on the Effects of Substrate, Back-Gate Bias and Front-Gate Engineering on the Performance of DMTFET-Based Biosensors

2020 ◽  
Vol 20 (18) ◽  
pp. 10405-10414 ◽  
Author(s):  
Sayan Kanungo ◽  
Budhaditya Majumdar ◽  
Subhas Mukhopadhyay ◽  
Debapriya Som ◽  
Sanatan Chattopadhyay ◽  
...  
Keyword(s):  
Gate Bias ◽  
Back Gate ◽  
Gate Engineering
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