Evolution of InGaAs/InP quantum well intermixing as a function of cap layer

2005 ◽  
Author(s):  
C. Carmody ◽  
H.H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Cap Layer

Quantum well intermixing in InGaAsP laser structures using a low temperature grown InP cap layer

2003 ◽  
Vol 18 (8) ◽  
pp. 782-787 ◽  
Author(s):  
B E Gordon ◽  
A S W Lee ◽  
D A Thompson ◽  
B J Robinson
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Cap Layer

scholarly journals Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

2003 ◽  
Vol 94 (3) ◽  
pp. 1550-1556 ◽  
Author(s):  
H. D. Sun ◽  
R. Macaluso ◽  
M. D. Dawson ◽  
F. Robert ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1783-1790 ◽  
Author(s):  
Gregory B. Tait ◽  
David B. Ameen
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Optical Diagnostics ◽  
Complete Suppression ◽  
Quantum Well Intermixing ◽  
Spatially Resolved ◽  
Non Destructive ◽  
Insight Into ◽  
Free Vacancy

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

scholarly journals Broadband III-V on silicon hybrid superluminescent LEDs by quantum well intermixing and multiple die bonding

2014 ◽  
Author(s):  
A. De Groote ◽  
J. D. Peters ◽  
M. L. Davenport ◽  
M. J. R. Heck ◽  
R. Baets ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing ◽  
Die Bonding

Spatially-Controllable Quantum Well Intermixing with Stripe-Size Dependence in AlGaAs Heterostructures

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4818-4821
Author(s):  
Nak-Jin Son ◽  
Haewook Han ◽  
O-Dae Kwon
Keyword(s):  
Quantum Well ◽  
Size Dependence ◽  
Quantum Well Intermixing
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