scholarly journals Terahertz-driven nonlinear electrical transport in semiconductor nanostructures

2005 ◽  
Author(s):  
C. Zhang
Keyword(s):  
Electrical Transport ◽  
Semiconductor Nanostructures

ELECTRICAL TRANSPORT AND STABILITY OF TMxSn1-x AMORPHOUS ALLOYS (TM = Fe, Co, Ni)

1980 ◽  
Vol 41 (C8) ◽  
pp. C8-477-C8-480
Author(s):  
G. Marchal ◽  
J. F. Geny ◽  
Ph. Mangin ◽  
Chr. Janot
Keyword(s):  
Electrical Transport ◽  
Amorphous Alloys

Spontaneous ordering of semiconductor nanostructures

1997 ◽  
Vol 167 (5) ◽  
pp. 552
Author(s):  
D. Bimberg ◽  
Iya P. Ipatova ◽  
Petr S. Kop'ev ◽  
N.N. Ledentsov ◽  
V.G. Malyshkin ◽  
...  
Keyword(s):  
Semiconductor Nanostructures

Tunneling features in semiconductor nanostructures

2017 ◽  
Vol 187 (11) ◽  
pp. 1147-1168 ◽  
Author(s):  
Petr I. Arseev ◽  
Vladimir N. Mantsevich ◽  
N.S. Maslova ◽  
Vladimir I. Panov
Keyword(s):  
Semiconductor Nanostructures

Covalent Atomic Bridges Enable Unidirectional Enhancement of Electronic Transport in Aligned Carbon Nanotubes

2019 ◽  
Author(s):  
Mingguang Chen ◽  
Wangxiang Li ◽  
Anshuman Kumar ◽  
Guanghui Li ◽  
Mikhail Itkis ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Transport ◽  
Large Scale ◽  
The Novel ◽  
Electrical Measurements ◽  
Metal Atoms ◽  
Aligned Carbon Nanotubes ◽  
Transport Channels ◽  
Walled Carbon Nanotubes ◽  
Bulk Structures

<p>Interconnecting the surfaces of nanomaterials without compromising their outstanding mechanical, thermal, and electronic properties is critical in the design of advanced bulk structures that still preserve the novel properties of their nanoscale constituents. As such, bridging the p-conjugated carbon surfaces of single-walled carbon nanotubes (SWNTs) has special implications in next-generation electronics. This study presents a rational path towards improvement of the electrical transport in aligned semiconducting SWNT films by deposition of metal atoms. The formation of conducting Cr-mediated pathways between the parallel SWNTs increases the transverse (intertube) conductance, while having negligible effect on the parallel (intratube) transport. In contrast, doping with Li has a predominant effect on the intratube electrical transport of aligned SWNT films. Large-scale first-principles calculations of electrical transport on aligned SWNTs show good agreement with the experimental electrical measurements and provide insight into the changes that different metal atoms exert on the density of states near the Fermi level of the SWNTs and the formation of transport channels. </p>

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