ELECTRICAL TRANSPORT IN THE DISLOCATION CORE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-113-C4-113
Author(s):  
R. Labusch
Keyword(s):  
Electrical Transport ◽  
Dislocation Core

Direct structure images of 30° partial dislocation cores in silicon

1987 ◽  
Vol 45 ◽  
pp. 242-243
Author(s):  
J. C. Barry ◽  
H. Alexander
Keyword(s):  
Dislocation Core ◽  
Preparation Technique ◽  
Burgers Vector ◽  
Vector Type ◽  
Sample Preparation Technique ◽  
Lattice Images ◽  
Dislocation Core Structure ◽  
Type Lattice ◽  
Direct Inspection

Dislocations in silicon produced by plastic deformation are generally dissociated into partials. 60° dislocations (Burgers vector type 1/2[101]) are dissociated into 30°(Burgers vector type 1/6[211]) and 90°(Burgers vector type 1/6[112]) dislocations. The 30° partials may be either of “glide” or “shuffle” type. Lattice images of the 30° dislocation have been obtained with a JEM 100B, and with a JEM 200Cx. In the aforementioned experiments a reasonable but imperfect match was obtained with calculated images for the “glide” model. In the present experiment direct structure images of 30° dislocation cores have been obtained with a JEOL 4000EX. It is possible to deduce the 30° dislocation core structure by direct inspection of the images. Dislocations were produced by compression of single crystal Si (sample preparation technique described in Alexander et al.).

Structural analysis of a Σ5 grain boundary in YBa2Cu3O7δ

1993 ◽  
Vol 51 ◽  
pp. 942-943
Author(s):  
J.-Y. Wang ◽  
Y. Zhu ◽  
A.H. King ◽  
M. Suenaga
Keyword(s):  
Grain Boundary ◽  
Lattice Mismatch ◽  
Weak Link ◽  
Coincidence Site Lattice ◽  
Large Angle ◽  
Dislocation Core ◽  
Superconducting Order Parameter ◽  
Outstanding Problem ◽  
Transmission Electron

One outstanding problem in YBa2Cu3O7−δ superconductors is the weak link behavior of grain boundaries, especially boundaries with a large-angle misorientation. Increasing evidence shows that lattice mismatch at the boundaries contributes to variations in oxygen and cation concentrations at the boundaries, while the strain field surrounding a dislocation core at the boundary suppresses the superconducting order parameter. Thus, understanding the structure of the grain boundary and the grain boundary dislocations (which describe the topology of the boundary) is essential in elucidating the superconducting characteristics of boundaries. Here, we discuss our study of the structure of a Σ5 grain boundary by transmission electron microscopy. The characterization of the structure of the boundary was based on the coincidence site lattice (CSL) model.Fig.l shows two-beam images of the grain boundary near the projection. An array of grain boundary dislocations, with spacings of about 30nm, is clearly visible in Fig. 1(a), but invisible in Fig. 1(b).

ELECTRICAL TRANSPORT AND STABILITY OF TMxSn1-x AMORPHOUS ALLOYS (TM = Fe, Co, Ni)

1980 ◽  
Vol 41 (C8) ◽  
pp. C8-477-C8-480
Author(s):  
G. Marchal ◽  
J. F. Geny ◽  
Ph. Mangin ◽  
Chr. Janot
Keyword(s):  
Electrical Transport ◽  
Amorphous Alloys

Covalent Atomic Bridges Enable Unidirectional Enhancement of Electronic Transport in Aligned Carbon Nanotubes

2019 ◽  
Author(s):  
Mingguang Chen ◽  
Wangxiang Li ◽  
Anshuman Kumar ◽  
Guanghui Li ◽  
Mikhail Itkis ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrical Transport ◽  
Large Scale ◽  
The Novel ◽  
Electrical Measurements ◽  
Metal Atoms ◽  
Aligned Carbon Nanotubes ◽  
Transport Channels ◽  
Walled Carbon Nanotubes ◽  
Bulk Structures

<p>Interconnecting the surfaces of nanomaterials without compromising their outstanding mechanical, thermal, and electronic properties is critical in the design of advanced bulk structures that still preserve the novel properties of their nanoscale constituents. As such, bridging the p-conjugated carbon surfaces of single-walled carbon nanotubes (SWNTs) has special implications in next-generation electronics. This study presents a rational path towards improvement of the electrical transport in aligned semiconducting SWNT films by deposition of metal atoms. The formation of conducting Cr-mediated pathways between the parallel SWNTs increases the transverse (intertube) conductance, while having negligible effect on the parallel (intratube) transport. In contrast, doping with Li has a predominant effect on the intratube electrical transport of aligned SWNT films. Large-scale first-principles calculations of electrical transport on aligned SWNTs show good agreement with the experimental electrical measurements and provide insight into the changes that different metal atoms exert on the density of states near the Fermi level of the SWNTs and the formation of transport channels. </p>

Optical transmittance and electrical transport investigations of Fe-doped In2O3 thin films

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Afroz Khan ◽  
F. Rahman ◽  
Razia Nongjai ◽  
K. Asokan
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Optical Transmittance
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