Modelling of device structure effects on electrical crosstalk in back illuminated CMOS compatible photodiodes

2005 ◽  
Author(s):  
S. Hinckley ◽  
P.V. Jansz ◽  
E.A. Gluszak ◽  
K. Eshraghian
Keyword(s):  
Device Structure ◽  
Cmos Compatible ◽  
Back Illuminated

Memristive Switches with Two Switching Polarities in a Forming Free Device Structure

2011 ◽  
Vol 1337 ◽  
Author(s):  
Rainer Bruchhaus ◽  
Christoph R. Hermes ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Simple Explanation ◽  
Device Structure ◽  
Pt Electrode ◽  
Cmos Compatible

ABSTRACTIn this study an electroforming free device structure based on 25nm thin TiO2 thin films is presented. The TiO2 films are deposited on CMOS compatible W plugs. The use of 5nm thick interlayers of Ti and W between the TiO2 and the Pt electrode turn out to be the key step to achieve the forming free performance. In these Pt/Ti/TiO2/W or Pt/W/TiO2/W samples the switching polarity can be repeatedly changed from “eightwise” to “counter-eightwise” in one device by a proper adjustment of the I-V measurement conditions. The most simple explanation for this observation is that the switching interface can be flipped back and forth from the bottom to the top electrode.

Radiation testing of a back illuminated, small pixel, CMOS compatible, CCD

2021 ◽  
Author(s):  
Beverly J. LaMarr ◽  
Marshall W. Bautz ◽  
Barry Burke ◽  
Michael Cooper ◽  
Kevan Donlon ◽  
...  
Keyword(s):  
Radiation Testing ◽  
Cmos Compatible ◽  
Back Illuminated ◽  
Small Pixel

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

1993 ◽  
Vol 51 ◽  
pp. 690-691
Author(s):  
W. T. Pike
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Thermal Emission ◽  
Lattice Parameter ◽  
Scanning Transmission Electron Microscope ◽  
Emission Source ◽  
Device Structure ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

Pressure Sensor Monolithically Integrating MEMS and CMOS-LSI with CMOS Compatible “Back-end-of-line MEMS processes”

2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto
Keyword(s):  
Pressure Sensor ◽  
Cmos Compatible

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Identifying the Root Cause of Source-Drain Leakage Caused Soft Fail in Advanced Bulk FinFET Devices

2018 ◽  
Author(s):  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chongkhiam Oh
Keyword(s):  
Careful Analysis ◽  
Physical Analysis ◽  
Device Structure ◽  
Tem Analysis ◽  
Root Cause ◽  
3D Architecture ◽  
Cause Of Failure ◽  
Electrical Analysis ◽  
Electrical Data

Abstract The paper reports the investigation on the root cause of source-drain leakage in bulk FinFET devices. While the failing device was readily isolated by nanoprobing technique and the electrical analysis pinpointed the potential defect location inside the Fin channel, the identification of physical root cause went through extreme challenges imposed by the tiny-sized device and the unique FinFET 3D architecture. The initial TEM analysis was misled by the projection of a species in the lamella surface and thus could not explain the electrical data. Careful analysis on the device structure was able to identify the origin of the species and led to the discovery of the actual root cause. This paper will provide the analysis details leading to the findings, and highlight the role of electrical understanding in not only providing guidance for physical analysis but also revealing the true root cause of failure in FinFET devices.

TECHNICAL AND ECONOMIC EVALUATION OF THE DEVELOPMENT OF A DEVICE FOR THE PREVENTION OF APNEA DURING PHYSIOLOGICAL SLEEP IN HUMANS

2020 ◽  
pp. 198-210
Author(s):  
Сергей Борисович Казаков ◽  
Дмитрий Михайлович Шишов ◽  
Антон Игоревич Ларин ◽  
Александр Петрович Николаев ◽  
Аза Валерьевна Писарева
Keyword(s):  
Sleep Apnea ◽  
Humidity Sensor ◽  
Lung Ventilation ◽  
High Price ◽  
Device Structure ◽  
Artificial Lung Ventilation ◽  
Exact Moment ◽  
The Cost ◽  
Technical Solutions ◽  
Physiological Sleep

В статье представлен обзор существующих технических решений в сфере мониторинга и предотвращения апноэ во сне. Произведён анализ существующих аппаратов для предотвращения апноэ, который показал, что на рынке присутствует большое количество импортных моделей, однако они имеют довольно высокую цену. Разработанный нами Российский аналог проектируемого аппарата, при схожих характеристиках, будет иметь более привлекательную цену, чем у импортных приборов. Интегрирование датчика влажности в персональную маску пациента даёт возможность отслеживать остановки дыхания пациента во время сна, и тем самым включать процесс принудительной подачи дыхательной смеси именно в тот момент, когда она необходима для устранения патологии. Целью научной работы является разработка конструкции прибора и создание алгоритма программы для управления аппарата искусственной вентиляции лёгких для предотвращения апноэ во сне. Показана разработка структуры устройства аппарата. Подобран компрессор и датчик влажности с обоснованными характеристиками для создания аппарата, а также основные элементы. Разработана конструкция корпуса аппарата и разработана компоновка. Выполнено технико-экономическое обоснование разработки аппаратно-программного комплекса для предотвращения апноэ во сне. Показано, что себестоимость готового изделия достаточно конкурентна The article presents an overview of existing technical solutions in the field of monitoring and prevention of sleep apnea. An analysis of existing devices for preventing apnea was made, which showed that there are a large number of imported models on the market, but they have a fairly high price. The Russian analog of the designed device developed by us, with similar characteristics, will have a more attractive price than that of imported devices. The integration of the humidity sensor into the patient's personal mask makes it possible to monitor the patient's breathing stops during sleep, and thus enable the process of forced delivery of the respiratory mixture at the exact moment when it is necessary to eliminate the pathology. The purpose of the research is to develop the device design and create a program algorithm for controlling the artificial lung ventilation device to prevent sleep apnea. The development of the device structure is shown. The compressor and humidity sensor with reasonable characteristics for creating the device, as well as the main elements are selected. The design of the device body and its layout were developed. A feasibility study for the development of a hardware and software system for preventing sleep apnea has been completed. It is shown that the cost of the finished product is quite competitive

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