A manufacturable, high power RF Gallium Nitride (GaN) technology portfolio with 65V operation and enhanced linearity

2011 ◽  
Author(s):  
J. B. Shealy ◽  
R. Vetury ◽  
B. Trabert ◽  
D. Runton
Keyword(s):  
Gallium Nitride ◽  
High Power

scholarly journals Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 575 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Jiang Lu ◽  
Xiaoli Tian ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Schottky Barrier ◽  
High Power ◽  
High Frequency ◽  
Recent Progress ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond

2013 ◽  
Vol 14 (3) ◽  
pp. 82-93 ◽  
Author(s):  
David W. Runton ◽  
Brian Trabert ◽  
Jeffrey B. Shealy ◽  
Ramakrishna Vetury
Keyword(s):  
Gallium Nitride ◽  
High Power ◽  
History Of

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

2013 ◽  
Vol 28 (7) ◽  
pp. 074014 ◽  
Author(s):  
Srabanti Chowdhury ◽  
Brian L Swenson ◽  
Man Hoi Wong ◽  
Umesh K Mishra
Keyword(s):  
Gallium Nitride ◽  
Power Electronics ◽  
High Power ◽  
Current Status ◽  
Vertical Transistors
Sign in / Sign up

Export Citation Format

Share Document