Chip Design of an UWB, High Gain and Low Noise Amplifier for Wireless Applications

2011 ◽  
Author(s):  
Jhin-Fang Huang ◽  
Ming-Chun Hsu ◽  
Jiun-Yu Wen ◽  
Ron-Yi Liu
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Chip Design ◽  
Wireless Applications ◽  
Noise Amplifier

A 0.1-10GHz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB receiver

2021 ◽  
Author(s):  
Zerun Jin ◽  
Zhi-Jian Chen ◽  
Riyan Wang ◽  
Bin Li ◽  
Xiao-Ling Lin
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
Uwb Receiver

scholarly journals Design of 94-GHz High-Gain Differential Low-Noise Amplifier Using 65-nm CMOS

2018 ◽  
Vol 29 (5) ◽  
pp. 393-396
Author(s):  
Hyun-woo Seo ◽  
Jae-hyun Park ◽  
Jun-seong Kim ◽  
Byung-sung Kim
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier

A Study on Scalability and Variation of CMOS Low Noise Amplifier in Advance CMOS Technology Processes

2016 ◽  
Vol 833 ◽  
pp. 135-139
Author(s):  
Dayang Nur Salmi Dharmiza Awang Salleh ◽  
Rohana Sapawi
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Rf Circuits ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Oxide Semiconductor ◽  
Technology Scaling ◽  
Wireless Applications ◽  
Noise Amplifier ◽  
Technology Processes

Recent technology requires multistandard Radio Frequency (RF) chips for multipurpose wireless applications. In RF circuits, a low-noise amplifier (LNA) plays the key role in determining the receiver’s performance. With CMOS technology scaling, various designs has been adopted to study circuit’s characteristic and variation. In this paper, we present the results of scalable wideband LNA design based on complementary metal oxide semiconductor (CMOS), with its variance study. The design was fabricated in 180nm, 90nm, 65nm and 40nm CMOS technology.

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