Fabrication and characterization of photonic crystal microcavities in quasi-single crystal diamond films

Author(s):  
J. Riedrich-Moller ◽  
L. Kipfstuhl ◽  
C. Hepp ◽  
M. Fischer ◽  
S. Gsell ◽  
...  
Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1080
Author(s):  
Julia Heupel ◽  
Maximilian Pallmann ◽  
Jonathan Körber ◽  
Rolf Merz ◽  
Michael Kopnarski ◽  
...  

The development of quantum technologies is one of the big challenges in modern research. A crucial component for many applications is an efficient, coherent spin–photon interface, and coupling single-color centers in thin diamond membranes to a microcavity is a promising approach. To structure such micrometer thin single-crystal diamond (SCD) membranes with a good quality, it is important to minimize defects originating from polishing or etching procedures. Here, we report on the fabrication of SCD membranes, with various diameters, exhibiting a low surface roughness down to 0.4 nm on a small area scale, by etching through a diamond bulk mask with angled holes. A significant reduction in pits induced by micromasking and polishing damages was accomplished by the application of alternating Ar/Cl2 + O2 dry etching steps. By a variation of etching parameters regarding the Ar/Cl2 step, an enhanced planarization of the surface was obtained, in particular, for surfaces with a higher initial surface roughness of several nanometers. Furthermore, we present the successful bonding of an SCD membrane via van der Waals forces on a cavity mirror and perform finesse measurements which yielded values between 500 and 5000, depending on the position and hence on the membrane thickness. Our results are promising for, e.g., an efficient spin–photon interface.


2011 ◽  
Vol 7 (1) ◽  
pp. 69-74 ◽  
Author(s):  
Janine Riedrich-Möller ◽  
Laura Kipfstuhl ◽  
Christian Hepp ◽  
Elke Neu ◽  
Christoph Pauly ◽  
...  

Author(s):  
Janine Riedrich-Möller ◽  
Laura Kipfstuhl ◽  
Christian Hepp ◽  
Sebastien Pezzagna ◽  
Jan Meijer ◽  
...  

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.


2012 ◽  
Vol 14 (5) ◽  
pp. 053011 ◽  
Author(s):  
F Picollo ◽  
D Gatto Monticone ◽  
P Olivero ◽  
B A Fairchild ◽  
S Rubanov ◽  
...  

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