Compact Tm:KYW laser passively Q-switched with a PbS-quantum dot-based saturable absorber

2011 ◽  
Author(s):  
Maxim S. Gaponenko ◽  
Victor E. Kisel ◽  
Alexander M. Malyarevich ◽  
Alexei A. Onushchenko ◽  
Konstantin V. Yumashev ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Saturable Absorber ◽  
Pbs Quantum Dot

PbS-Quantum-Dot Saturable Absorber Q-switched Tm:KYW Mini-Laser with 9 ns / 40 μJ Pulses

2011 ◽  
Author(s):  
Maxim S. Gaponenko ◽  
Victor E. Kisel ◽  
Alexander M. Malyarevich ◽  
Konstantin V. Yumashev ◽  
Nikolai V. Kuleshov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Saturable Absorber ◽  
Pbs Quantum Dot

scholarly journals Passively Q-switched Er^3+-doped fiber lasers using colloidal PbS quantum dot saturable absorber

2016 ◽  
Vol 24 (10) ◽  
pp. 10675 ◽  
Author(s):  
Yin-Wen Lee ◽  
Chien-Ming Chen ◽  
Chia-Wei Huang ◽  
Shih-Ken Chen ◽  
Jhang-Rong Jiang
Keyword(s):  
Quantum Dot ◽  
Saturable Absorber ◽  
Fiber Lasers ◽  
Pbs Quantum Dot

Passive mode locking of a Cr4+:YAG laser by PbS quantum-dot-doped glass saturable absorber

2004 ◽  
Vol 241 (4-6) ◽  
pp. 449-454 ◽  
Author(s):  
A.A. Lagatsky ◽  
C.G. Leburn ◽  
C.T.A. Brown ◽  
W. Sibbett ◽  
A.M. Malyarevich ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Saturable Absorber ◽  
Mode Locking ◽  
Passive Mode ◽  
Yag Laser ◽  
Doped Glass ◽  
Pbs Quantum Dot

A p-Type PbS Quantum Dot Ink with Improved Stability for Solution Processable Optoelectronics

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Chemical Characterization ◽  
Single Step ◽  
Improved Stability ◽  
Solution Processable ◽  
P Type ◽  
Pbs Quantum Dot

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...

Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

2016 ◽  
Vol 94 (7) ◽  
pp. 687-692
Author(s):  
Masood Mehrabian ◽  
Naser Ghasemian
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Growth Period ◽  
Short Circuit Current ◽  
Nanorod Array ◽  
Open Circuit ◽  
Zno Film ◽  
Photovoltaic Properties ◽  
Pbs Quantum Dot

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

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