High-index-contrast AlGaAs waveguide scattering loss reduction via oxidation smoothing of sidewall roughness

2008 ◽  
Author(s):  
Christopher S. Seibert ◽  
Di Liang ◽  
Douglas C. Hall ◽  
Zane A. Shellenbarger
Keyword(s):  
High Index ◽  
Loss Reduction ◽  
Sidewall Roughness ◽  
Scattering Loss ◽  
Index Contrast ◽  
High Index Contrast

scholarly journals Optical loss reduction in high-index-contrast chalcogenide glass waveguides via thermal reflow

2010 ◽  
Vol 18 (2) ◽  
pp. 1469 ◽  
Author(s):  
Juejun Hu ◽  
Ning-Ning Feng ◽  
Nathan Carlie ◽  
Laeticia Petit ◽  
Anu Agarwal ◽  
...  
Keyword(s):  
Chalcogenide Glass ◽  
Optical Loss ◽  
High Index ◽  
Loss Reduction ◽  
Glass Waveguides ◽  
Index Contrast ◽  
High Index Contrast ◽  
Thermal Reflow

Interference effect in scattering loss of high-index-contrast planar waveguides caused by boundary reflections

2008 ◽  
Vol 33 (13) ◽  
pp. 1479 ◽  
Author(s):  
J. H. Schmid ◽  
A. Delâge ◽  
B. Lamontagne ◽  
J. Lapointe ◽  
S. Janz ◽  
...  
Keyword(s):  
Interference Effect ◽  
High Index ◽  
Planar Waveguides ◽  
Scattering Loss ◽  
Index Contrast ◽  
High Index Contrast

A High Index Contrast Silicon Oxynitride Materials Platform for Er-doped Microphotonic Amplifiers

2004 ◽  
Vol 817 ◽  
Author(s):  
Sajan Saini ◽  
Jessica G. Sandland ◽  
Anat Eshed ◽  
Daniel K. Sparacin ◽  
Luca Dal Negro ◽  
...  
Keyword(s):  
Low Noise ◽  
Silicon Oxynitride ◽  
High Index ◽  
Index Of Refraction ◽  
Scattering Loss ◽  
Host System ◽  
Waveguide Amplifiers ◽  
Index Contrast ◽  
High Index Contrast ◽  
Er Doped

AbstractEr-based optical amplification continues to be the ideal low noise, WDM crosstalk free, broadband candidate for waveguide amplifiers. Design analysis of the applicability of Er-Doped Waveguide Amplifiers (EDWAs) for micron-scale integrated photonics in a planar lightwave circuit concludes: (i) an >80× increase in gain efficiency, and (ii) a >40×increase in device shrink can be realized, for a high index contrast EDWA (with a core-cladding index difference of δn=0.1↔0.7), compared to a conventional Er-doped fiber amplifier. The materials challenge now is to establish a robust materials system which meets this high index difference design requirement while simultaneously leveraging the capability of silicon (Si) processing: a host platform for EDWAs must be found which can integrate with Si Microphotonics. Silicon nitride (Si3N4), silicon oxide (SiO2) and a miscible silicon oxynitride alloy (SiON) of the two meet this materials challenge. We present the results of reactive and conventional magnetron sputtering based materials characterization for this high index host system. Room temperature and 4 K photo-luminescence studies for annealed samples show the reduction of non-radiative de-excitation centers while maintaining an amorphous host structure. Atomic force microscopy shows less than 1 nm peak-to-peak roughness in deposited films. Prism coupler measurements show a reliable reproducibility of host index of refraction with waveguide scattering loss <2 dB/cm. We conclude that the SiON host system forms an optimal waveguide core for an SiO2-clad EDWA. Initial gain measurements show a gain coefficient of approximately 3.9 dB/cm.

High Index-Contrast Silicon-On-Insulator Nanophotonics

2006 ◽  
Author(s):  
P. Bienstman ◽  
F. Laere ◽  
D. Taillaert ◽  
P. Dumon ◽  
W. Bogaerts ◽  
...  
Keyword(s):  
High Index ◽  
Silicon On Insulator ◽  
Index Contrast ◽  
High Index Contrast

scholarly journals Design of broadband highly reflective subwavelength high-index-contrast gratings in the visible regime

OSA Continuum ◽  
2020 ◽  
Vol 3 (5) ◽  
pp. 1232 ◽  
Author(s):  
Xingzhe Shi ◽  
Yuanfu Lu ◽  
Changshui Chen ◽  
Songhao Liu ◽  
Guangyuan Li
Keyword(s):  
High Index ◽  
Index Contrast ◽  
High Index Contrast
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