Analysis of Ring-Metal-Aperture VCSELs for Single-Lateral-Mode Operation

2007 ◽  
Author(s):  
Gennady A. Smolyakov ◽  
Marek Osinski
Keyword(s):  
Mode Operation ◽  
Lateral Mode

Single-lateral-mode operation of 980-nm InGaAs-(Al)GaAs pump lasers with uncoated and coated facets

1996 ◽  
Vol 8 (5) ◽  
pp. 605-607 ◽  
Author(s):  
A. Paradisi ◽  
A. de Campos Sachs ◽  
A. Gobbi ◽  
J.R. Filho ◽  
R.B. Martins
Keyword(s):  
Mode Operation ◽  
Lateral Mode ◽  
Pump Lasers

Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe

1997 ◽  
Vol 3 (2) ◽  
pp. 666-671 ◽  
Author(s):  
M. Sagawa ◽  
K. Hiramoto ◽  
T. Toyonaka ◽  
T. Kikawa ◽  
S. Fujisaki ◽  
...  
Keyword(s):  
High Power ◽  
Mode Operation ◽  
Lateral Mode

Record Wear Studies by Scanning Electron Microscopy

1968 ◽  
Vol 26 ◽  
pp. 364-365
Author(s):  
M.D. Coutts ◽  
E.R. Levin ◽  
J.G. Woodward
Keyword(s):  
Electron Microscopy ◽  
Constant Velocity ◽  
Peak Velocity ◽  
Great Depth ◽  
Depth Of Focus ◽  
Sweep Frequency ◽  
Transmission Electron ◽  
Test Record ◽  
Lateral Mode ◽  
Scanning Electron

While record grooves have been studied by transmission electron microscopy with replica techniques, and by optical microscopy, the former are cumbersome and restricted and the latter limited by lack of depth of focus and resolution at higher magnification. With its great depth of focus and ease in specimen manipulation, the scanning electron microscope is admirably suited for record wear studies.A special RCA sweep frequency test record was used with both lateral and vertical modulation bands. The signal is a repetitive, constant-velocity sweep from 2 to 20 kHz having a duration and repetitive rate of approximately 0.1 sec. and a peak velocity of 5.5 cm/s.A series of different pickups and numbers of plays were used on vinyl records. One centimeter discs were then cut out, mounted and coated with 200 Å of gold to prevent charging during examination. Wear studies were made by taking micrographs of record grooves having 1, 10 and 50 plays with each stylus and comparing with typical “no-play” grooves. Fig. 1 shows unplayed grooves in a vinyl pressing with sweep-frequency modulation in the lateral mode.

Stable operation of multiple-lateral-mode ridge-waveguide lasers for high-speed printing

1997 ◽  
Vol 33 (3) ◽  
pp. 214
Author(s):  
R. LaComb ◽  
D.K. Wagner ◽  
L. DiMarco ◽  
J. Connolly
Keyword(s):  
High Speed ◽  
Ridge Waveguide ◽  
Stable Operation ◽  
Waveguide Lasers ◽  
Lateral Mode ◽  
Ridge Waveguide Lasers

High-performance SAWR strain sensor with piston-mode operation

2021 ◽  
pp. 1-1
Author(s):  
Qiang Xiao ◽  
Xiaoxin Ma ◽  
Weibiao Wang ◽  
Yanping Fan ◽  
Ping Cai ◽  
...  
Keyword(s):  
High Performance ◽  
Strain Sensor ◽  
Mode Operation ◽  
Piston Mode

scholarly journals Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 441
Author(s):  
Marcello Cioni ◽  
Alessandro Bertacchini ◽  
Alessandro Mucci ◽  
Nicolò Zagni ◽  
Giovanni Verzellesi ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Driving Voltage ◽  
Drain Voltage ◽  
Current Increase ◽  
Mode Operation ◽  
Switch Mode ◽  
Gate Signal ◽  
A Current ◽  
Parameter Monitoring

In this paper, we investigate the evolution of threshold voltage (VTH) and on-resistance (RON) drifts in the silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) during the switch-mode operation. A novel measurement setup for performing the required on-the-fly characterization is presented and the experimental results, obtained on commercially available TO-247 packaged SiC devices, are reported. Measurements were performed for 1000 s, during which negative VTH shifts (i.e., VTH decrease) and negative RON drifts (i.e., RON decrease) were observed. To better understand the origin of these parameter drifts and their possible correlation, measurements were performed for different (i) gate-driving voltage (VGH) and (ii) off-state drain voltage (VPH). We found that VTH reduction leads to a current increase, thus yielding RON to decrease. This correlation was explained by the RON dependence on the overdrive voltage (VGS–VTH). We also found that gate-related effects dominate the parameter drifts at low VPH with no observable recovery, due to the repeated switching of the gate signal required for the parameter monitoring. Conversely, the drain-induced instabilities caused by high VPH are completely recoverable within 1000 s from the VPH removal. These results show that the measurement setup is able to discern the gate/drain contributions, clarifying the origin of the observed VTH and RON drifts.

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