Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe

1997 ◽  
Vol 3 (2) ◽  
pp. 666-671 ◽  
Author(s):  
M. Sagawa ◽  
K. Hiramoto ◽  
T. Toyonaka ◽  
T. Kikawa ◽  
S. Fujisaki ◽  
...  
1982 ◽  
Vol 129 (5) ◽  
pp. 199
Author(s):  
V.V. Bezotosny ◽  
P.G. Eliseev ◽  
B.N. Sverdlov ◽  
L.M. Dolginov ◽  
E.G. Shevchenko

2003 ◽  
Author(s):  
Reuel B. Swint ◽  
Terence S. Yeoh ◽  
Victor C. Elarde ◽  
Mark S. Zediker ◽  
James J. Coleman
Keyword(s):  

2020 ◽  
Vol 1004 ◽  
pp. 464-471
Author(s):  
Sarah Rugen ◽  
Siddarth Sundaresan ◽  
Ranbir Singh ◽  
Nando Kaminski

Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.


1995 ◽  
Vol 16 (12) ◽  
pp. 2133-2146 ◽  
Author(s):  
K. Sasaki ◽  
O. Takahashi ◽  
N. Takada ◽  
M. Nagatsu ◽  
T. Tsukishima ◽  
...  

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