THz generation by quantum interference in optically excited Zinc-Blende quantum wells

2006 ◽  
Author(s):  
Jacob B. Khurgin
Keyword(s):  
Quantum Wells ◽  
Quantum Interference ◽  
Thz Generation ◽  
Zinc Blende

Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure

2015 ◽  
Vol 252 (4) ◽  
pp. 670-677 ◽  
Author(s):  
C. M. Duque ◽  
A. L. Morales ◽  
M. E. Mora-Ramos ◽  
C. A. Duque
Keyword(s):  
Optical Properties ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Zinc Blende ◽  
Ingan Quantum Wells

The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells

2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Variational Approach ◽  
Coupled Quantum Wells ◽  
Zinc Blende ◽  
Impurity Interaction ◽  
The Right ◽  
Peak Value

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.

Absorption and Emission of Light in Quantum Structures

2020 ◽  
pp. 343-418
Author(s):  
Vurgaftman Igor
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Quantum Wires ◽  
Incident Light ◽  
Optical Gain ◽  
Two Dimensional ◽  
Intersubband Transitions ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Two Dimensional Materials

This chapter shows how to calculate the absorption coefficient, optical gain, and radiative recombination rates in quantum wells and superlattices. A detailed treatment of both interband and intersubband transitions is presented, and their differences and similarities are considered in detail. The optical properties of wurtzite quantum wells and zinc-blende quantum wires and dots are also discussed. Finally, the interaction of excitonic transitions with incident light in quantum wells is considered as a model for other two-dimensional materials.

States of direct and indirect excitons in strained zinc-blende GaN/InGaN asymmetric quantum wells

2017 ◽  
Vol 112 ◽  
pp. 574-583 ◽  
Author(s):  
J.G. Rojas-Briseño ◽  
J.C. Martínez-Orozco ◽  
M.E. Mora-Ramos
Keyword(s):  
Quantum Wells ◽  
Indirect Excitons ◽  
Zinc Blende ◽  
Asymmetric Quantum

scholarly journals Band alignment in quantum wells from automatically tuned DFT+U

2019 ◽  
Vol 21 (11) ◽  
pp. 5966-5973 ◽  
Author(s):  
Grigory Kolesov ◽  
Chungwei Lin ◽  
Andrew Knyazev ◽  
Keisuke Kojima ◽  
Joseph Katz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Bulk Properties ◽  
Band Offsets ◽  
Zinc Blende

Accurate band offsets in III–V zinc blende-alloy quantum wells were obtained computationally with the DFT+U method automatically tuned to reproduce bulk properties.

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