Quantum interference currents by excitation of heavy and light hole excitons in GaAs quantum wells

2006 ◽  
Author(s):  
Mark Bieler ◽  
Klaus Pierz ◽  
Philip Dawson ◽  
Uwe Siegner
Keyword(s):  
Quantum Wells ◽  
Quantum Interference ◽  
Light Hole

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Exchange splitting of light hole excitons in Al1−χGaχAs-GaAs quantum wells

1991 ◽  
Vol 80 (8) ◽  
pp. 553-556 ◽  
Author(s):  
Martin W. Berz ◽  
Lucio Claudio Andreani ◽  
Edgar F. Steigmeier ◽  
Franz-Karl Reinhart
Keyword(s):  
Quantum Wells ◽  
Light Hole ◽  
Exchange Splitting

Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells

1998 ◽  
Vol 184-185 ◽  
pp. 863-866 ◽  
Author(s):  
Jun Suda ◽  
Masahiro Ogawa ◽  
Keiichiro Sakurai ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Light Hole ◽  
Strained Quantum Wells

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

Exciton Transitions in Narrow GaAs/AlxGal-x As Quantum Wells

1992 ◽  
Vol 261 ◽  
Author(s):  
O. L. Russo ◽  
V. Rehn ◽  
T. W. Nee ◽  
T. L. Cole ◽  
W. M. Theis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Hole ◽  
Close Coupling ◽  
Electric Field Effects ◽  
Coupled Quantum Wells ◽  
Confining Potential ◽  
First Approximation ◽  
Hole Conduction ◽  
Interfacial Charge

ABSTRACTElectroreflectance (ER) measurements were made on GaAs/AxGal-x As coupled quantum wells at room temperature and at 77K. The close coupling of the narrow (28.3 A) barriers resulted in splitting of the hole and electron subband levels which was observed at both temperatures. As a first approximation, the confining potential was assumed to be due to the barrier alone; electric field effects of the modulating potential and trapped interfacial charge were considered to be negligible. The dominant heavy holeconduction and light hole-conduction transitions observed at 300K were at 1523meV and 1539 meV respectively, although other weaker transitions were also resolved.

Pulse-induced quantum interference of intersubband transitions in coupled quantum wells

2004 ◽  
Vol 84 (1) ◽  
pp. 64-66 ◽  
Author(s):  
T. Müller ◽  
W. Parz ◽  
G. Strasser ◽  
K. Unterrainer
Keyword(s):  
Quantum Wells ◽  
Quantum Interference ◽  
Intersubband Transitions ◽  
Coupled Quantum Wells

FIELD-INDUCED QUANTUM INTERFERENCE IN SEMICONDUCTOR QUANTUM WELLS FOR LASING WITHOUT POPULATION INVERSION AND ELECTROMAGNETICALLY INDUCED TRANSPARENCY

1995 ◽  
Vol 04 (02) ◽  
pp. 261-282 ◽  
Author(s):  
Y. ZHAO ◽  
D. HUANG ◽  
C. WU
Keyword(s):  
Quantum Wells ◽  
Quantum Interference ◽  
Population Inversion ◽  
Electromagnetically Induced Transparency ◽  
Random Phase ◽  
Nonlinear Susceptibility ◽  
Double Quantum ◽  
Single Quantum Well ◽  
Semiconductor Quantum Wells ◽  
Induced Transparency

This paper presents the current results of field-induced quantum interference in semiconductor quantum wells. Three-level systems with two conduction subbands in single and double quantum wells coupled by a resonant field are studied. We investigate effects of the Coulomb and field-induced electronic renormalizations of the energy subbands and steady eigenstates of electrons. The random-phase and ladder approximations have been used to calculate the linear interband and intersubband optical absorptions and refractive indices. The effect of collective dipole moment on the nonlinear susceptibility has been incorporated into the study by using a local-field approach. Lasing without population inversion, electromagnetically induced transparency, and enhanced nonlinearity with reduced absorption inside the intersubband-coupled single quantum well and dc-field coupled double quantum wells are found.

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