Growth and characteristics of epitaxial nanowires on a lattice-mismatched substrate

Author(s):  
Linus C. Chuang ◽  
Michael Moewe ◽  
Shanna Crankshaw ◽  
Yu Ben ◽  
Chris Chase ◽  
...  
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Adam Krysztofik ◽  
Sevgi Özoğlu ◽  
Robert D. McMichael ◽  
Emerson Coy

AbstractWe report on the correlation of structural and magnetic properties of Y3Fe5O12 (YIG) films deposited on Y3Al5O12 substrates using pulsed laser deposition. The recrystallization process leads to an unexpected formation of interfacial tensile strain and consequently strain-induced anisotropy contributing to the perpendicular magnetic anisotropy. The ferromagnetic resonance linewidth of YIG is significantly increased in comparison to a film on a lattice-matched Gd3Ga5O12 substrate. Notably, the linewidth dependency on frequency has a negative slope. The linewidth behavior is explained with the proposed anisotropy dispersion model.


1989 ◽  
Vol 208 (1-2) ◽  
pp. L61-L72 ◽  
Author(s):  
S.M. Paik ◽  
S. Das Sarma

2001 ◽  
Vol 79 (5) ◽  
pp. 608-610 ◽  
Author(s):  
A. Yamada ◽  
P. J. Fons ◽  
R. Hunger ◽  
K. Iwata ◽  
K. Matsubara ◽  
...  

1992 ◽  
Vol 60 (17) ◽  
pp. 2057-2059 ◽  
Author(s):  
P. L. Gourley ◽  
I. J. Fritz ◽  
T. M. Brennan ◽  
B. E. Hammons ◽  
A. E. McDonald ◽  
...  

2000 ◽  
Vol 07 (05n06) ◽  
pp. 561-564 ◽  
Author(s):  
S. NITTA ◽  
T. KASHIMA ◽  
R. NAKAMURA ◽  
M. IWAYA ◽  
H. AMANO ◽  
...  

Mass transport of patterned GaN at around 1100°C in nitrogen with an ammonia atmosphere has been discovered for the first time. The mass transport process is found to be affected by the anisotropy of surface energy of GaN. Behaviors of threading dislocations which are predominantly of the mixed type and the pure edge type are affected by the anisotropy during mass transport. Mixed type dislocations are bent keeping the geometrical relationship normal to the surfaces, while pure edge type dislocations are bent horizontally. This new-found process, the so-called "mass transport epitaxy," is one of the best methods for achieving low dislocation density GaN on the highly lattice-mismatched substrate.


1989 ◽  
Vol 208 (1-2) ◽  
pp. L61-L72 ◽  
Author(s):  
S.M. Paik ◽  
S.Das Sarma

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