Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate

2001 ◽  
Vol 79 (5) ◽  
pp. 608-610 ◽  
Author(s):  
A. Yamada ◽  
P. J. Fons ◽  
R. Hunger ◽  
K. Iwata ◽  
K. Matsubara ◽  
...  
Keyword(s):  
Static Analysis ◽  
Film Growth ◽  
Crystal Film ◽  
Lattice Mismatched Substrate

Effects of Sputtering Pressure on (ZnO)x(InN)1-x Crystal Film Growth at 450°C

2018 ◽  
Vol 941 ◽  
pp. 2093-2098
Author(s):  
Naho Itagaki ◽  
Kazuto Takeuchi ◽  
Nanoka Miyahara ◽  
Kouki Imoto ◽  
Hyun Woong Seo ◽  
...  
Keyword(s):  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Film ◽  
Crystal Films ◽  
Sputtering Pressure

We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-xcrystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-xfilms was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

The Analysis of the Film Morphology

2013 ◽  
Vol 734-737 ◽  
pp. 2377-2381
Author(s):  
Bo Xiong Zhao ◽  
Yu Jian Du ◽  
Xin Sui
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ybco Film ◽  
Thin Film Growth ◽  
Schematic Diagram ◽  
Film Morphology ◽  
Crystal Film ◽  
New Type

Thin film technologies are widely used in modern scientific and technological fields .The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials .In this article , the studies of thin film growth are carried out. The studies are made a simulation of surface growth of the GaxIn1-xAs1-ySbyand YBCO film, Schematic diagram of the surface morphology under different substrate temperature of thin film growth are obtained and analyzed .Many significant results are found. First of all ,the background of the topic ,research purpose and significance are described in this article .Then the studies of thin film growth are carried out ，to analyse the effects of different elements on the surface of the crystal film.

Flux-mediated epitaxy for ferroelectric Bi4Ti3O12 single crystal film growth

2006 ◽  
Vol 17 (2-4) ◽  
pp. 189-195
Author(s):  
R. Takahashi ◽  
Y. Yonezawa ◽  
Y. Matsumoto ◽  
H. Koinuma
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
Single Crystal Film ◽  
Crystal Film

Ionic liquid-assisted perovskite crystal film growth for high performance planar heterojunction perovskite solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 97848-97852 ◽  
Author(s):  
Yangyang Wan ◽  
Sujuan Dong ◽  
Yaling Wang ◽  
Liying Yang ◽  
Wenjing Qin ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Solar Cells ◽  
High Performance ◽  
Film Growth ◽  
Perovskite Solar Cells ◽  
Crystal Film ◽  
One Step ◽  
Perovskite Crystal ◽  
The One ◽  
Planar Heterojunction

Ionic liquid, 1-ethylpyridinium chloride with a relative low melting point of 100 °C is used to control the morphological growth of CH3NH3PbI3 during the one-step deposition method for preparing efficient planar heterojunction perovskite solar cells.

Combinatorial exploration of flux material for Bi4Ti3O12 single crystal film growth

2006 ◽  
Vol 252 (7) ◽  
pp. 2477-2481 ◽  
Author(s):  
R. Takahashi ◽  
Y. Yonezawa ◽  
M. Ohtani ◽  
M. Kawasaki ◽  
Y. Matsumoto ◽  
...  
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
Single Crystal Film ◽  
Crystal Film

Epitaxial Film Growth of Single Crystal Ce/V Prepared by Molecular-Beam Epitaxy

1986 ◽  
Vol 77 ◽  
Author(s):  
Hitoshi Homma ◽  
Kai-Y. Yang ◽  
Ivan K. Schuller
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
High Energy ◽  
Epitaxial Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Crystal Film ◽  
Epitaxial Film Growth ◽  
First Time

ABSTRACTThe growth of epitaxial films of cerium (Ce)/vanadium (V)/on single crystal sapphires (α-A1203) was studied by in-situ reflection high energy electron diffraction and x-ray scattering. For the first time Ce(111) single crystal film was grown on V(110)/α-A12O3 (1120) in the Frank-van der Merwe mode. A new epitaxial orientation, different from the well known Nishiyama-Wasserman or Kurdjumov-Sachs orientations is found in the present study. Subsequent V(110) layers grow epitaxially with three equivalent domains.

In-Situ Rheed Observation of Mocvd-Gan Film Growth

2001 ◽  
Vol 693 ◽  
Author(s):  
Masatomo Sumiya ◽  
Noritaka Ogusu ◽  
Kouhei Osada ◽  
Shunro Fuke
Keyword(s):  
Buffer Layer ◽  
Film Growth ◽  
Deposition Process ◽  
Film Deposition ◽  
Total Flow ◽  
Total Flow Rate ◽  
Gan Film ◽  
Lattice Mismatched Substrate

AbstractWe developed the MOCVD apparatus equipped with RHEED system, which enable us to observe in-situ and real time RHEED for GaN film growth in ~100mTorr of pressure. We attempted to grow GaN film with this MOCVD chamber in 100mTorr. The in-situ RHEED was subsequently observed along the film deposition process in order to understand both the role of buffer layer and the mechanism of GaN film growth by MOCVD on highly lattice-mismatched substrate like sapphire. The results indicate that oxygen removed from the sapphire surface was observed during its cleaning in H2 flow at 1100°C. The dependence of re-crystallization and evaporation of the buffer layer on the annealing ambient was also detected. Although the nitrogen was slightly deficient, HT-GaN film with smooth surface was obtained in 100mTorr by adding H2 gas and reducing total flow rate. In preliminary deposition, the RHEED oscillation-like was observed in MOCVD-GaN growth. Thus, our developing deposition system has a potential to understand the growth mechanism with atomic level.

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