Temperature sensitivity analysis of high-performance InGaAs(N) (λ = 1.185 - 1.3 μm) quantum well lasers

2003 ◽  
Author(s):  
N. Tansu ◽  
L.J. Mawst
Keyword(s):  
Sensitivity Analysis ◽  
Quantum Well ◽  
Temperature Sensitivity ◽  
High Performance ◽  
Quantum Well Lasers

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

1994 ◽  
Vol 30 (2) ◽  
pp. 424-440 ◽  
Author(s):  
M. Chand ◽  
S.N.G. Chu ◽  
N.K. Dutta ◽  
J. Lopata ◽  
M. Geva ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Fiber Amplifiers ◽  
Erbium Doped ◽  
Ingaas Quantum Well

High performance 1.3 μm GaInNAs quantum well lasers on GaAs

2008 ◽  
Author(s):  
S. M. Wang ◽  
G. Adolfsson ◽  
H. Zhao ◽  
Y. Q. Wei ◽  
J. S. Gustavsson ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers

Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasers

1993 ◽  
Vol 62 (2) ◽  
pp. 175-177 ◽  
Author(s):  
Y. Zou ◽  
J. S. Osinski ◽  
P. Grodzinski ◽  
P. D. Dapkus ◽  
W. Rideout ◽  
...  
Keyword(s):  
Quantum Well ◽  
Temperature Sensitivity ◽  
Auger Recombination ◽  
Quantum Well Lasers ◽  
Differential Gain

High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers

1994 ◽  
Vol 12 (1) ◽  
pp. 28-37 ◽  
Author(s):  
P.J.A. Thijs ◽  
T. van Dongen ◽  
L.F. Tiemeijer ◽  
J.J.M. Binsma
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Strained Layer
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