High-power optically pumped GaInSb/InAs quantum well lasers with GaInAsSb integrated absorber layers emitting at 4 /spl mu/m
1998 ◽
Keyword(s):
Keyword(s):
1994 ◽
Vol 7
(3)
◽
pp. 139-143
◽
Keyword(s):
2010 ◽
Vol 50
(5)
◽
pp. 722-725
◽
Keyword(s):