Transition from radiative to nonradiative recombination in 1.3-/spl mu/m and 1.5-/spl mu/m InGaAs(P) multiple quantum well semiconductor diode lasers

1998 ◽  
Author(s):  
S.J. Sweeney ◽  
A.F. Phillips ◽  
A.R. Adams ◽  
E.P. O'Reilly ◽  
M. Silver ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Multiple Quantum Well ◽  
Semiconductor Diode ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Semiconductor Diode Lasers

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

Coherent linear and two‐dimensional arrays of multiple quantum well grating‐surface‐emitting diode lasers emitting at 1.5 μm

1990 ◽  
Vol 57 (26) ◽  
pp. 2753-2755 ◽  
Author(s):  
S. L. Palfrey ◽  
R. E. Enstrom ◽  
E. A. VanGieson ◽  
J. M. Hammer ◽  
Ramon U. Martinelli ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Two Dimensional

Vertically stacked multiple‐quantum‐wire semiconductor diode lasers

1991 ◽  
Vol 59 (18) ◽  
pp. 2225-2227 ◽  
Author(s):  
S. Simhony ◽  
E. Kapon ◽  
E. Colas ◽  
D. M. Hwang ◽  
N. G. Stoffel ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Diode Lasers ◽  
Semiconductor Diode ◽  
Multiple Quantum ◽  
Semiconductor Diode Lasers

Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode

2010 ◽  
Vol 96 (21) ◽  
pp. 211122 ◽  
Author(s):  
Harumasa Yoshida ◽  
Masakazu Kuwabara ◽  
Yoji Yamashita ◽  
Kazuya Uchiyama ◽  
Hirofumi Kan
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser
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