In situ optical second harmonic monitoring of hydrogen adsorption and desorption kinetics during epitaxial growth on Si [001]

Author(s):  
X.F. Hu ◽  
Z. Xu ◽  
P.S. Parkinson ◽  
D. Lim ◽  
J.G. Eckerdt ◽  
...  
Vacuum ◽  
2004 ◽  
Vol 73 (1) ◽  
pp. 73-78 ◽  
Author(s):  
A Kutana ◽  
T Ito ◽  
I.L Bolotin ◽  
B Makarenko ◽  
J.W Rabalais

1999 ◽  
Vol 343-344 ◽  
pp. 404-407 ◽  
Author(s):  
Fumihiko Hirose ◽  
Hitoshi Sakamoto ◽  
Miyako Terashi ◽  
Junko Kuge ◽  
Michio Niwano

2012 ◽  
Vol 66 (5) ◽  
pp. 600-605 ◽  
Author(s):  
Gengshen Hu ◽  
Lin Zhu ◽  
Aiping Jia ◽  
Xin Hu ◽  
Guanqun Xie ◽  
...  

The adsorption and desorption of hydrogen on Ir/SiO2 catalyst were studied by using in situ diffuse reflection infrared Fourier transform spectroscopy (DRIFTS) combined with curve-fitting analysis. The results indicate that there are three different surface species formed on the catalyst that correspond to the peaks at 1950, 2010, and 2035 cm−1, respectively, when exposed in H2 flow at 130 °C. These surface species display different adsorption and desorption trends. Surface hydride forms after the catalyst is cooled to 80 °C and it disappears after the catalyst is heated to 130 °C again. This study may help us understand the interaction between hydrogen and noble metals and thus give more insights to heterogeneous catalytic mechanism involving hydrogen and hydrogen storage using metal materials.


Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.


Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 584
Author(s):  
Rui Dang ◽  
Liqiu Ma ◽  
Shengguo Zhou ◽  
Deng Pan ◽  
Bin Xia

Ultra-high molecular weight polythene (UHMWPE), with outstanding characteristics, is widely applied in modern industry, while it is also severely limited by its inherent shortcomings, which include low hardness, poor wear resistance, and easy wear. Implementation of feasible protection on ultra-high molecular weight polythene to overcome its shortcomings would be of significance. In the present study, amorphous carbon (a-C) film was fabricated on ultra-high molecular weight polythene (UHMWPE) to provide good protection, and the relevant growth mechanism of a-C film was revealed by controlling carbon plasma currents. The results showed the in situ transition layer, in the form of chemical bonds, was formed between the UHMWPE substrate and the a-C film with the introduction of carbon plasma, which provided strong adhesion, and then the a-C film continued epitaxial growth on the in situ transition layer with the treatment of carbon plasma. This in situ growth of a-C film, including the in situ transition layer and the epitaxial growth layer, significantly improved the wetting properties, mechanical properties, and tribological properties of UHMWPE. In particular, good protection by in situ growth a-C film on UHMWPE was achieved during sliding wear.


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