In situ optical second-harmonic-generation monitoring of disilane adsorption and hydrogen desorption during epitaxial growth on Si(001)

1997 ◽  
Vol 71 (10) ◽  
pp. 1376-1378 ◽  
Author(s):  
X. F. Hu ◽  
Z. Xu ◽  
D. Lim ◽  
M. C. Downer ◽  
P. S. Parkinson ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Epitaxial Growth ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Hydrogen Desorption ◽  
Optical Second Harmonic Generation

Domain rearrangement in ferroelectric Bi4Ti3O12 thin films studied by in situ optical second harmonic generation

2001 ◽  
Vol 90 (7) ◽  
pp. 3497-3503 ◽  
Author(s):  
Yaniv Barad ◽  
James Lettieri ◽  
Chris D. Theis ◽  
Darrell G. Schlom ◽  
Venkatraman Gopalan
Keyword(s):  
Thin Films ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Optical Second Harmonic Generation

Optical second harmonic generation studies of epitaxial growth of Si and SiGe

2000 ◽  
Vol 209 (2-3) ◽  
pp. 297-301 ◽  
Author(s):  
E.S Tok ◽  
N.J Woods ◽  
R.W Price ◽  
A.G Taylor ◽  
J Zhang
Keyword(s):  
Second Harmonic Generation ◽  
Epitaxial Growth ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Optical Second Harmonic Generation

Optical Second Harmonic Generation as a Tool for In Situ, Real-Time Monitor of Thin Film Epitaxial Growth

2014 ◽  
Vol 605 ◽  
pp. 223-226
Author(s):  
Andrea Rubano ◽  
Tim Günter ◽  
Martin Lilienblum ◽  
Domenico Paparo ◽  
Lorenzo Marrucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Second Harmonic Generation ◽  
Real Time ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
High Energy ◽  
Direct Access ◽  
Human Machine Interaction ◽  
Optical Second Harmonic Generation

Oxide-based hetero-structures are promising candidates for building the next generation of functional devices. In order to achieve this goal, it is required to have solid and reliable sensors for monitoring the growth of thin films with single-atomic-layer sensitivity. So far, the most popular in-situ diagnostic tool is Reflection High Energy Electron Diffraction, which provides information on the structural properties of the growing films, and not a direct access to the desired interfacial physical properties of interest. Furthermore, it needs a strong human-machine interaction, preventing its use into industrial mass production. Standard optics applied on buried interfaces suffers the disadvantage to have a probing depth which is orders of magnitude larger than the interface layer. Here we propose to overcome this problem by resorting to optical Second Harmonic Generation and we present some example to show the potential of this technique as a real-time monitor system for thin-film crystal growth.

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