Presence of Internal Field Emission Currents in GaAs Diodes

2012 ◽  
Author(s):  
Victor Rogelio Barrales-Guadarrama ◽  
Meliton Ezequiel Rodriguez-Rodriguez ◽  
Raymundo Barrales-Guadarrama ◽  
Ernesto Rodrigo Vazquez-Ceron
Keyword(s):  
Field Emission ◽  
Internal Field

Electroluminescence due to internal field emission in KI

1970 ◽  
Vol 31 (7) ◽  
pp. 1455-1460 ◽  
Author(s):  
C. Paracchini ◽  
G. Schianchi
Keyword(s):  
Field Emission ◽  
Internal Field

Internal Field Emission in Carbon Black-Loaded Natural Rubber Vulcanizates

1964 ◽  
Vol 37 (2) ◽  
pp. 348-354 ◽  
Author(s):  
L. K. H. van Beek ◽  
B. I. C. F. van Pul
Keyword(s):  
Carbon Black ◽  
Natural Rubber ◽  
Field Emission ◽  
Electron Micrographs ◽  
Internal Field ◽  
Emission Characteristics ◽  
Furnace Black ◽  
Three Samples ◽  
Insulating Gap ◽  
Natural Rubber Vulcanizates

Abstract The nonohmic behavior of carbon black-loaded natural rubber vulcanizates was studied. Three samples contained high-abrasion furnace black (HAF) in good, moderate, and poor dispersion. Another sample contained a good dispersion of medium thermal black (MT). The nonohmic behavior of the poor HAF dispersion and that of the MT dispersion could be interpreted as due to internal field emission across insulating gap widths of 2 and 2.5 µ. The existence of such gaps was confirmed by electron micrographs. No clear evidence of internal field emission could be obtained for the good and moderate HAF dispersions where, according to electron micrographs, the gaps are much narrower. There is some indication that the degree of dispersion can be correlated with field emission characteristics.

Messung und Deutung extrem hoher Rauschtemperaturen von Siliciumdioden im Durchbruchbereich.

1964 ◽  
Vol 19 (5) ◽  
pp. 563-572
Author(s):  
H. Melchior ◽  
M. J. O. Strutt
Keyword(s):  
Field Emission ◽  
Noise Temperature ◽  
Thermal Fluctuations ◽  
Internal Field ◽  
Switching Noise ◽  
Noise Spectral Density ◽  
Avalanche Behavior ◽  
Sufficient Energy ◽  
Breakdown Region ◽  
Stable Burning

Semiconductor-diodes operated in the breakdown region show large noise fluctuations. The noise fluctuations associated with the onset of astable burning microplasmas are well known. The noise spectral density for such statistical switching microplasma pulses has been calculated and agrees with measured values. ZEXER-diodes, in which internal field emission is the cause of the breakdown or ZENER-diodes with stable burning microplasmas, the so-called avalanches diodes, show large noise fluctuations too. These spontaneous fluctuations of voltage and current can be explained by the thermal fluctuations of the breakdown-carriers heated up by the high field in the transition region of a p-n junction. ZENER-diodes break down by internal field emission, when the measured noise temperature does not exceed about 18 000 °K. In this case the aequivalent noise temperature grows proportional to the square root of the breakdown current. When the noise temperature of the breakdown is higher than about 18 000°K, the carriers have sufficient energy to produce electron-hole pairs by ionization. The stable parts of breakdown characteristics with noise temperatures above about 18 000°K show avalanche behavior. Often microplasma switching noise is observed. In the stable burning parts of avalanche breakdown characteristics, noise temperatures as high as 105 to 107°K are measured. These high noise temperatures can not be fully explained by thermally heated carriers in the breakdown region. It is believed that fluctuations of the ionization breakdown contribute to these noise temperatures.

Noise studies in internal field emission diodes

1972 ◽  
Vol 15 (12) ◽  
pp. 1273-1276 ◽  
Author(s):  
G. Lecoy ◽  
R. Alabedra ◽  
B. Barban
Keyword(s):  
Field Emission ◽  
Internal Field
Sign in / Sign up

Export Citation Format

Share Document