Study on the effect of oxygen ions on the steel corrosion in concrete

2011 ◽  
Author(s):  
Ai Hongmei ◽  
Bai Junying
Keyword(s):  
Steel Corrosion ◽  
Oxygen Ions ◽  
Effect Of Oxygen

Effect of Oxygen Ions Diffusion on Steel Corrosion in Concrete

2011 ◽  
Vol 477 ◽  
pp. 398-403 ◽  
Author(s):  
Jun Ying Bai ◽  
Hong Mei Ai ◽  
Pu Guang Lu
Keyword(s):  
Diffusion Coefficient ◽  
Corrosion Rate ◽  
Steel Corrosion ◽  
Research Progress ◽  
Necessary Condition ◽  
Corrosion Mechanism ◽  
Ion Diffusion ◽  
Oxygen Ions ◽  
Testing Technology ◽  
Effect Of Oxygen

Oxygen ions are the necessary condition for steel corrosion which occurs when the steel’s passive film is destroyed. Oxygen ions diffusion directly influences steel corrosion rate. The paper, starting from the steel corrosion mechanism, summarized the testing technology and the research progress of oxygen ions diffusion coefficient, analyzed the influencing factors and studied further the effect of oxygen ions diffusion on steel corrosion in concrete. The testing technology of oxygen ion diffusion coefficient is combined with the testing method of steel corrosion rate, and the relationship between oxygen ions diffusion coefficient and steel corrosion rate are established.

scholarly journals Cassini Plasma Spectrometer and hybrid model study on Titan's interaction: Effect of oxygen ions

2011 ◽  
Vol 116 (A7) ◽  
pp. n/a-n/a ◽  
Author(s):  
I. Sillanpää ◽  
D. T. Young ◽  
F. Crary ◽  
M. Thomsen ◽  
D. Reisenfeld ◽  
...  
Keyword(s):  
Hybrid Model ◽  
Interaction Effect ◽  
Oxygen Ions ◽  
Model Study ◽  
Plasma Spectrometer ◽  
Effect Of Oxygen

scholarly journals Effect of Oxygen Ions on Plasma Oxidation of Silicon.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (8) ◽  
pp. 504-509 ◽  
Author(s):  
Isao KAMIOKA ◽  
Masahiro KITAJIMA ◽  
Takaya KAWABE ◽  
Kazutaka G. NAKAMURA ◽  
Shunichi HISHITA
Keyword(s):  
Plasma Oxidation ◽  
Oxygen Ions ◽  
Effect Of Oxygen

Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Ueklsa ◽  
T. Goto ◽  
Mv. Kumagai
Keyword(s):  
Single Crystal ◽  
Sapphire Substrate ◽  
Annealing Temperature ◽  
Yellow Band ◽  
Oxygen Ions ◽  
Band Emission ◽  
Pl Intensity ◽  
Effect Of Oxygen ◽  
Optimum Annealing Temperature ◽  
Yellow Band Emission

AbstractIn order to investigate the luminescence properties of Er3+in GaN and the effect of oxygen (O) on Er3+ -related emission in GaN:Er, erbium (Er) ions were implanted into single-crystal h-GaN grown on a c-axis sapphire substrate at an energy of 2MeV. Oxygen ions were subsequently coiniplanted into GaN with Er ions. The influence of oxygen on Er-related emission in GaN with a large yellow band was studied by comparing photoluminescence (PL) measurements of GaN:Er and GaN:ErO. It was found that the optimum annealing temperature to obtain maximum PL intensity was 1200°C and that the E3+a-related PL intensities from GaN:ErO samples were negligibly enhanced in comparison with the GaN:Er samples. The temperature dependence of PL intensity in GaN:ErO showed no appreciable difference from that of GaN:Er. But good correlation between Er-related and a large yellow band emission was observed in GaN. This indicates that codoped oxygen ions influence Er-related and yellow band emission in GaN

Effect of oxygen plasma immersion ion implantation on the formation of nanostructures over Ni–Ti alloy

RSC Advances ◽  
2016 ◽  
Vol 6 (78) ◽  
pp. 74493-74499 ◽  
Author(s):  
S. Viswanathan ◽  
L. Mohan ◽  
Parthasarathi Bera ◽  
C. Anandan
Keyword(s):  
Ion Implantation ◽  
Anodic Oxidation ◽  
Oxygen Plasma ◽  
Ti Alloy ◽  
Oxygen Ions ◽  
Plasma Immersion Ion Implantation ◽  
Effect Of Oxygen

Ni–Ti alloy has been implanted with oxygen ions by plasma immersion ion implantation. Ni–Ti–O nanotubes are formed by anodic oxidation of oxygen implanted Ni–Ti alloy.

scholarly journals Cluster Observations on Time‐of‐Flight Effect of Oxygen Ions in Magnetotail Reconnection Exhaust Region

2020 ◽  
Vol 47 (3) ◽  
Author(s):  
T. Wu ◽  
S. Y. Fu ◽  
L. Xie ◽  
Q.‐G. Zong ◽  
X. Z. Zhou ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Oxygen Ions ◽  
Magnetotail Reconnection ◽  
Effect Of Oxygen

Oxygen Bombardment Induced Activation of Glassy Carbon

1993 ◽  
Vol 304 ◽  
Author(s):  
G. M. Jenkins ◽  
D. Ila ◽  
E. K. Williams
Keyword(s):  
Glassy Carbon ◽  
Room Temperature ◽  
Phenolic Resin ◽  
Translational Symmetry ◽  
Energy Beam ◽  
Oxygen Ions ◽  
Oxygen Ion ◽  
Raman Microprobe ◽  
Before And After ◽  
Effect Of Oxygen

AbstractWe have studied the effect of oxygen ion bombardment of glassy carbon at room temperature, using a composite bi-energy beam of 3.2 and 3.1 MeV ions. Carbon specimens were prepared in-house by pyrolysis of phenolic resin at 1000° C. Raman microprobe spectra of the surface and implanted volume before and after irradiation showed that the implanted oxygen ions had disrupted translational symmetry at the surface and caused maximum damage in the carbon 3.5 μm below the surface. By analogy to the “activation” of charcoals1 we conclude that pores are opened up by preferential attack of strained carbon sites.

Preparation of a Semiconductor Film with the Aid of a Superionic

2018 ◽  
Vol 771 ◽  
pp. 130-135
Author(s):  
Aitbai Rakhymbekov ◽  
Aigul Idrisova ◽  
Rosa Saduakasova ◽  
Gulmira Nurbosynova ◽  
Meruert Turlybekova
Keyword(s):  
Vanadium Dioxide ◽  
Constant Current ◽  
Semiconductor Film ◽  
Controlled Atmosphere ◽  
Current Field ◽  
Oxide Compound ◽  
Oxide Semiconductors ◽  
Oxygen Ions ◽  
Oxygen Pump ◽  
Effect Of Oxygen

The actuality of the topic chosen by us lies in the fact that the effect of oxygen on the properties of semiconductors has not been studied sufficiently well, mainly because of the imperfections of methods for controlling the oxygen content in semiconductor materials. Almost in all such materials, oxygen is present either as an uncontrolled impurity or as a doping additive, or, in the case of oxide semiconductors, as in our case with a semiconductor film of vanadium dioxide, is part of the compound. The oxygen contained in the semiconductor film significantly affects the property of the material: in the first two cases, this influence is determined by the amount and state of the impurity, in the third - by the composition, or by the stoichiometry of the oxide compound. We set a goal to develop a technique for obtaining a semiconductor film of vanadium dioxide in a controlled atmosphere of oxygen. The semiconductor film thus obtained is used in holography to record and store optical information. For the production of VO2 films by oxidation in a controlled atmosphere, an apparatus including an oxygen pump based on stabilized zirconia dioxide has been developed. The principle of operation and the main characteristics of such an oxygen pump is the unique application of the property of the superionics - to carry through itself exclusively oxygen ions under the influence of a constant current field and a high temperature. The technique developed by us for obtaining a semiconductor film of vanadium dioxide in a controlled atmosphere of oxygen has no analog.

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