Silicon photonic devices for high-capacity optical interconnects

2016 ◽  
Author(s):  
Wei Shi ◽  
Raphael Dube-Demers ◽  
Jonathan St-Yves ◽  
Sophie LaRochelle
Keyword(s):  
Optical Interconnects ◽  
High Capacity ◽  
Photonic Devices ◽  
Silicon Photonic

Silicon photonic devices based on SOI/bulk-silicon platforms for chip-level optical interconnects

2015 ◽  
Author(s):  
Gyungock Kim ◽  
In Gyoo Kim ◽  
Sanghoon Kim ◽  
Jiho Joo ◽  
Ki-Seok Jang ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Photonic Devices ◽  
Bulk Silicon ◽  
Silicon Photonic

Modeling Silicon-Based Periodic Waveguides for Optical Interconnects

2012 ◽  
Vol 1438 ◽  
Author(s):  
Meng-Mu Shih
Keyword(s):  
Optical Waveguides ◽  
Mode Coupling ◽  
Optical Interconnects ◽  
Hybrid Structure ◽  
Photonic Devices ◽  
Coupling Coefficients ◽  
Silicon Photonic ◽  
Metal Gratings ◽  
Silicon Based ◽  
Planar Optical Waveguides

ABSTRACTTo assist the precision and stability of wavelength at 1550 nm and 1300 nm in planar optical waveguides, hybrid semiconductor-metal corrugated gratings with nanometer period are integrated into silicon-based optical interconnects. This work utilizes multi-parametric optical waveguide models to compute the mode-coupling coefficients in the silicon photonic devices. For such a semiconductor-metal hybrid structure, a proper photonic technique needs to be utilized to solve this computational complexity. The optical method and the photonic method are used to compute coupling coefficients. Both methods have close numerical values shown in figures. Numerical results demonstrate how the normalized corrugation amplitudes of metal gratings can affect the coupling coefficients. Further physical interpretation and discussion can support and explain the above results. The modeling results can help engineers decide the values of parameters used in the design and fabrication of optical waveguides.

Development of silicon photonic devices for optical interconnects

2013 ◽  
Vol 56 (3) ◽  
pp. 586-593 ◽  
Author(s):  
Xi Xiao ◽  
ZhiYong Li ◽  
Tao Chu ◽  
Hao Xu ◽  
XianYao Li ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Photonic Devices ◽  
Silicon Photonic

scholarly journals Toward Nonvolatile Switching in Silicon Photonic Devices

2021 ◽  
pp. 2000501
Author(s):  
Jorge Parra ◽  
Irene Olivares ◽  
Antoine Brimont ◽  
Pablo Sanchis
Keyword(s):  
Photonic Devices ◽  
Silicon Photonic

Silicon photonic devices for mid-infrared applications

Nanophotonics ◽  
2014 ◽  
Vol 3 (4-5) ◽  
pp. 329-341 ◽  
Author(s):  
Raji Shankar ◽  
Marko Lončar
Keyword(s):  
Gas Sensing ◽  
Wavelength Region ◽  
Photonic Devices ◽  
Ring Resonators ◽  
Space Communications ◽  
Mid Infrared ◽  
Silicon Photonic ◽  
Processing Techniques ◽  
Silicon Based

AbstractThe mid-infrared (IR) wavelength region (2–20 µm) is of great interest for a number of applications, including trace gas sensing, thermal imaging, and free-space communications. Recently, there has been significant progress in developing a mid-IR photonics platform in Si, which is highly transparent in the mid-IR, due to the ease of fabrication and CMOS compatibility provided by the Si platform. Here, we discuss our group’s recent contributions to the field of silicon-based mid-IR photonics, including photonic crystal cavities in a Si membrane platform and grating-coupled high-quality factor ring resonators in a silicon-on-sapphire (SOS) platform. Since experimental characterization of microphotonic devices is especially challenging at the mid-IR, we also review our mid-IR characterization techniques in some detail. Additionally, pre- and post-processing techniques for improving device performance, such as resist reflow, Piranha clean/HF dip cycling, and annealing are discussed.

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