Analysis of bottom gate bottom contact device using floating electrode structure

2016 ◽  
Author(s):  
Arun Pratap Singh Rathod ◽  
A. K. Baliga ◽  
Brijesh Kumar
Keyword(s):  
Contact Device ◽  
Electrode Structure ◽  
Bottom Contact ◽  
Floating Electrode ◽  
Bottom Gate

scholarly journals Molecular doping effect in bottom-gate, bottom-contact pentacene thin-film transistors

2011 ◽  
Vol 110 (5) ◽  
pp. 054505 ◽  
Author(s):  
Yusuke Wakatsuki ◽  
Kei Noda ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Kazumi Matsushige
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Doping Effect ◽  
Bottom Contact ◽  
Molecular Doping ◽  
Bottom Gate

Switching Behavior in a Vertical Tunneling Transistor by Tunneling Mechanism Transition and Floating Electrode Structure

2020 ◽  
Vol 2 (8) ◽  
pp. 2461-2469
Author(s):  
Jeong Hee Shin ◽  
Su Jin Heo ◽  
Jae Hoon Yang ◽  
Hyun Sik Kim ◽  
Jae Eun Jung ◽  
...  
Keyword(s):  
Switching Behavior ◽  
Electrode Structure ◽  
Tunneling Mechanism ◽  
Mechanism Transition ◽  
Floating Electrode

TRANSISTOR DE FILME FINO ORGÂNICO BOTTOM GATE – BOTTOM CONTACT PARA ANÁLISE DE QUALIDADE DA ÁGUA

2021 ◽  
pp. 135-147
Author(s):  
José Enrique Eirez Izquierdo ◽  
Marco Roberto Cavallari ◽  
Dennis Cabrera García ◽  
Loren Mora Pastrana ◽  
Marcelo Goncalves Honnicke ◽  
...  
Keyword(s):  
Bottom Contact ◽  
Bottom Gate

The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs

2016 ◽  
Vol 12 (3) ◽  
pp. 252-257 ◽  
Author(s):  
Matteo Rapisarda ◽  
Sabrina Calvi ◽  
Antonio Valletta ◽  
Guglielmo Fortunato ◽  
Luigi Mariucci
Keyword(s):  
Electrical Characteristics ◽  
Bottom Contact ◽  
Bottom Gate

Two causes of source/drain series resistance in bottom-contact pentacene thin-film transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
Makoto Noda ◽  
Nobuhide Yoneya ◽  
Nobukazu Hirai ◽  
Noriyuki Kawashima ◽  
Kazumasa Nomoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Series Resistance ◽  
Direct Injection ◽  
Edge Region ◽  
Field Effect Mobility ◽  
Electrode Structure ◽  
Adhesion Layer ◽  
Self Assembled Monolayer ◽  
Bottom Contact

AbstractWe identified two causes of source/drain (S/D) series resistance (Rs) in bottom-contact (BC) pentancene thin-film transistors (TFTs). One is mixed-phase pentacene grown in the blurred- edge region of Au electrodes and the other is the semi-insulating pentacene region between the Au electrode and the carrier-accumulating layer. A novel Au S/D electrode structure with a self-assembled monolayer (SAM) adhesion layer enables direct injection of carriers into the accumulating layer and markedly reduces Rs for unit gate width (RsW) to 6 Mωμ[.proportional]m. BC TFTs with this electrode structure showed extrinsic field-effect mobility as high as 1.1 cm2/Vs.

Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors

2013 ◽  
Vol 52 (2R) ◽  
pp. 021602 ◽  
Author(s):  
Kei Noda ◽  
Yusuke Wakatsuki ◽  
Yuji Yamagishi ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bottom Contact ◽  
Bottom Gate

A new floating electrode structure for generating homogeneous electrical fields in microfluidic channels

Lab on a Chip ◽  
2011 ◽  
Vol 11 (12) ◽  
pp. 1995 ◽  
Author(s):  
Loes I. Segerink ◽  
Ad J. Sprenkels ◽  
Johan G. Bomer ◽  
Istvan Vermes ◽  
Albert van den Berg
Keyword(s):  
Microfluidic Channels ◽  
Electrode Structure ◽  
Electrical Fields ◽  
Floating Electrode
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