Switching Behavior in a Vertical Tunneling Transistor by Tunneling Mechanism Transition and Floating Electrode Structure

2020 ◽  
Vol 2 (8) ◽  
pp. 2461-2469
Author(s):  
Jeong Hee Shin ◽  
Su Jin Heo ◽  
Jae Hoon Yang ◽  
Hyun Sik Kim ◽  
Jae Eun Jung ◽  
...  
Keyword(s):  
Switching Behavior ◽  
Electrode Structure ◽  
Tunneling Mechanism ◽  
Mechanism Transition ◽  
Floating Electrode

A new floating electrode structure for generating homogeneous electrical fields in microfluidic channels

Lab on a Chip ◽  
2011 ◽  
Vol 11 (12) ◽  
pp. 1995 ◽  
Author(s):  
Loes I. Segerink ◽  
Ad J. Sprenkels ◽  
Johan G. Bomer ◽  
Istvan Vermes ◽  
Albert van den Berg
Keyword(s):  
Microfluidic Channels ◽  
Electrode Structure ◽  
Electrical Fields ◽  
Floating Electrode

The effects of strain and strain rate on residual microstructures in copper

1986 ◽  
Vol 44 ◽  
pp. 420-421
Author(s):  
M. F. Stevens ◽  
P. S. Follansbee
Keyword(s):  
Strain Rate ◽  
Applied Stress ◽  
Threshold Stress ◽  
Rate Sensitivity ◽  
Viscous Drag ◽  
Strain Rates ◽  
Strain And Strain Rate ◽  
Threshold Strength ◽  
Mechanism Transition ◽  
Intrinsic Strength

The strain rate sensitivity of a variety of materials is known to increase rapidly at strain rates exceeding ∼103 sec-1. This transition has most often in the past been attributed to a transition from thermally activated guide to viscous drag control. An important condition for imposition of dislocation drag effects is that the applied stress, σ, must be on the order of or greater than the threshold stress, which is the flow stress at OK. From Fig. 1, it can be seen for OFE Cu that the ratio of the applied stress to threshold stress remains constant even at strain rates as high as 104 sec-1 suggesting that there is not a mechanism transition but that the intrinsic strength is increasing, since the threshold strength is a mechanical measure of intrinsic strength. These measurements were made at constant strain levels of 0.2, wnich is not a guarantee of constant microstructure. The increase in threshold stress at higher strain rates is a strong indication that the microstructural evolution is a function of strain rate and that the dependence becomes stronger at high strain rates.

A two degrees of freedom comb capacitive-type accelerometer with low cross-axis sensitivity

2019 ◽  
Vol 13 (3) ◽  
pp. 5334-5346
Author(s):  
M. N. Nguyen ◽  
L. Q. Nguyen ◽  
H. M. Chu ◽  
H. N. Vu
Keyword(s):  
Degrees Of Freedom ◽  
Proof Mass ◽  
Vibration Modes ◽  
Electrode Structure ◽  
Element Analysis ◽  
Mechanical Coupling ◽  
Fully Differential ◽  
Mode Effects ◽  
The Finite Element Analysis ◽  
Cross Axis

In this paper, we report on a SOI-based comb capacitive-type accelerometer that senses acceleration in two lateral directions. The structure of the accelerometer was designed using a proof mass connected by four folded-beam springs, which are compliant to inertial displacement causing by attached acceleration in the two lateral directions. At the same time, the folded-beam springs enabled to suppress cross-talk causing by mechanical coupling from parasitic vibration modes. The differential capacitor sense structure was employed to eliminate common mode effects. The design of gap between comb fingers was also analyzed to find an optimally sensing comb electrode structure. The design of the accelerometer was carried out using the finite element analysis. The fabrication of the device was based on SOI-micromachining. The characteristics of the accelerometer have been investigated by a fully differential capacitive bridge interface using a sub-fF switched-capacitor integrator circuit. The sensitivities of the accelerometer in the two lateral directions were determined to be 6 and 5.5 fF/g, respectively. The cross-axis sensitivities of the accelerometer were less than 5%, which shows that the accelerometer can be used for measuring precisely acceleration in the two lateral directions. The accelerometer operates linearly in the range of investigated acceleration from 0 to 4g. The proposed accelerometer is expected for low-g applications.

Charging Potential Measurement of Floating Electrode Modeled on the Arc Shield of Vacuum Interrupter under AC Voltage Application

2021 ◽  
Vol 141 (1) ◽  
pp. 21-26
Author(s):  
Hideaki Fukuda ◽  
Kenta Yamamura ◽  
Issei Fujita ◽  
Ryutaro Kusa ◽  
Yasushi Yamano
Keyword(s):  
Potential Measurement ◽  
Vacuum Interrupter ◽  
Voltage Application ◽  
Floating Electrode

Effect of Shielding a Floating Electrode on the Power Efficiency of a Micro-plasma VUV Light Source

2015 ◽  
Vol 135 (3) ◽  
pp. 114-115 ◽  
Author(s):  
Ryoto Sato ◽  
Daisuke Yasumatsu ◽  
Shinya Kumagai ◽  
Masaru Hori ◽  
Minoru Sasaki
Keyword(s):  
Light Source ◽  
Power Efficiency ◽  
Floating Electrode

Factors Affecting Customer Switching Behavior towards Hybrid Electrical Vehicles (HEV’s) from a Customer Perspective in Jordan

2018 ◽  
Vol 1 (3) ◽  
pp. 53
Author(s):  
Bushra Mahadin
Keyword(s):  
Decision Making ◽  
Consumer Behaviour ◽  
New Technologies ◽  
International Marketing ◽  
Current Trend ◽  
Switching Behavior ◽  
Future Research ◽  
Decision Making Process ◽  
Customer Switching ◽  
Electrical Vehicles

Purpose-This paper aims to investigate factors that affect customer switching from Internal Combustion Engine Vehicles (ICEV’s) to Hybrid Electrical Vehicles (HEV’s), in Jordan for the period of (2010-2014).Design/methodology/approach-A self-administered survey was hand-delivered to the targeted sample of car users in Jordan. The authors delivered 400 questionnaires to customers, from which 333 were deemed valid for the analysis, corresponding to the percentage of (83.25%) which indicates the validity of the study. Findings- There was no difference in switching behavior between (ICEV’s) and (HEV’s) based on gender in the Jordanian market. Fuel consumption efficiency was the number one variable that supports the switching behavior towards (HEV's), followed by Eco friendliness, lower taxes and technological features. Price and the current trend in the market were the least supporting factors. In addition to that the perception of the battery life of (HEV's), limited choices in the market, lack of information and fear of the relatively new technology were the major hindering factors of choosing an (HEV).Research limitations-Future research needs to investigate other factors that may affect customers’ behavior such as perceived image, trust, and subjective norms. Future research should investigate into the importance of environmental awareness and new technologies, and gender differences in behavior. From an international marketing standpoint, comparative studies between Jordanian and non-Jordanian customers are potential areas of future research for international marketing strategies and cross-cultural consumer behaviour analysis. Practical implications-The paper identifies the determinants of switching behavior. marketers should focus addressing customers concerns in terms of providing enough information and building awareness towards the technology and it's benefits towards the society and the environment.Originality/value-Our study is one of the few in Jordan that investigates the switching behavior towards vehicles technology. Our study is thought to have made a modest contribution to consumer behaviour literature and, specifically, for decision making process. It offers marketers insights into the determinants of switching behavior towards the hybrid vechicle technology and how this contribute to consumers’ decision making process and attitudes to achieve the intended behavioural outcomes

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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