Micromachined PMN-PT single crystal diaphragm for piezoelectric sensing applications

Author(s):  
Jue Peng ◽  
Xinyu Zhang ◽  
Guo Dan ◽  
Tianfu Wang ◽  
Siping Chen
2017 ◽  
Vol 733 ◽  
pp. 3-7 ◽  
Author(s):  
Afzaal Qamar ◽  
Dzung Viet Dao ◽  
Ji Sheng Han ◽  
Alan Iacopi ◽  
Toan Dinh ◽  
...  

This article reports the first results on stress induced pseudo-Hall effect in single crystal n-type 3C-SiC(100) grown by LPCVD process. After the growth process, Hall devices were fabricated by standard photolithography and dry etching processes. The bending beam method was employed to study the stress induced changes in the electrical response of the fabricated Hall devices. It has been observed that when stress is applied to the 3C-SiC(100) Hall devices, the offset voltage of the Hall devices varies linearly with the applied compressive and tensile stresses which is called, the pseudo-Hall effect. The variation of the offset voltage of these Hall devices is also proportional to the applied input current. This variation of the offset voltage with the applied compressive and tensile stresses shows that single crystal n-type 3C-SiC(100) can be used for stress sensing applications.


Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7435
Author(s):  
Zitao Shi ◽  
Qilong Yuan ◽  
Yuezhong Wang ◽  
Kazuhito Nishimura ◽  
Guojian Yang ◽  
...  

Bulk diamonds show great potential for optical applications such as for use in infrared (IR) windows and temperature sensors. The development of optical-grade bulk diamond synthesis techniques has facilitated its extreme applications. Here, two kinds of bulk single-crystal diamonds, a high-pressure and high-temperature (HPHT) diamond and a chemical vapor deposition (CVD) diamond, were evaluated by Raman spectroscopy and Fourier Transform Infra-Red (FTIR) spectroscopy at a range of temperatures from 80 to 1200 K. The results showed that there was no obvious difference between the HPHT diamond and the CVD diamond in terms of XRD and Raman spectroscopy at 300–1200 K. The measured nitrogen content was ~270 and ~0.89 ppm for the HPHT diamond and the CVD diamond, respectively. The moderate nitrogen impurities did not significantly affect the temperature dependence of Raman spectra for temperature-sensing applications. However, the nitrogen impurities greatly influence FTIR spectroscopy and optical transmittance. The CVD diamond showed higher transmittance, up to 71% with only a ~6% drop at temperatures as high as 873 K. This study shows that CVD bulk diamonds can be used for IR windows under harsh environments.


2017 ◽  
Author(s):  
M. Buric ◽  
B. Liu ◽  
S. Huang ◽  
M. Wang ◽  
K. Chen ◽  
...  

2011 ◽  
Vol 1354 ◽  
Author(s):  
William T. Spratt ◽  
Mengbing Huang ◽  
Chuanlei Jia ◽  
Lei Wang ◽  
Vimal K. Kamineni ◽  
...  

ABSTRACTDue to its outstanding thermal and chemical stability, single-crystal sapphire is a crucial material for high-temperature optical sensing applications. The potential for using hydrogen ion implantation to fabricate stable, high temperature optical waveguides in single crystal sapphire is investigated in this work. Hydrogen ions were implanted in c-plane sapphire with energies of 35 keV and 1 MeV and fluences 1016-1017/cm2. Subsequent annealing was carried out in air at temperatures ranging from 500˚C to 1200˚C. Complementary techniques were used to characterize the samples, including ellipsometry and prism coupling to examine optical properties, Rutherford backscattering/ion channeling for crystal defects, and nuclear reaction analysis for hydrogen profiling. Several guiding modes were observed in H-implanted (1 MeV) samples annealed above 800˚C through prism coupling, and a maximum index modification of 3% was observed in the 35 keV samples and 1% in the 1 MeV samples through ellipsometry, with the 1 MeV index variation being confirmed through prism coupling. The possible causes of the index modifications, such as H related defects, as well as implications for tailoring the refractive index of sapphire are discussed.


2014 ◽  
Vol 105 (16) ◽  
pp. 163510 ◽  
Author(s):  
S. Majdi ◽  
M. Kolahdouz ◽  
M. Moeen ◽  
K. K. Kovi ◽  
R. S. Balmer ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C908-C908
Author(s):  
Lee Brammer ◽  
Iñigo Vitórica-Yrezábal ◽  
James Wright ◽  
Ashleigh Fletcher

Adsorption of gases and vapours, and solid-state reactions, involving crystalline materials are areas of considerable interest. Crystalline materials can thereby be engaged in catalysis, energy storage, separation and sensing applications. The study of such behaviour often requires the application of crystallography combined with other experimental (and computational) methods to obtain a complete understanding. In this presentation, related families of coordination polymers will be discussed. The materials exhibit flexibility in the crystalline state and have been shown to reversibly absorb a variety of small molecules from the vapour phase, including alcohols and arenes, as well as gases.[1,2] The trapped molecules can be located crystallographically within the crystals and have been shown to bind either covalently, through metal-ligand bond insertion reactions, or non-covalently. A series of studies will be described, including reversible single-crystal-to-single-crystal reactions, in situ powder diffraction and spectroscopic studies. The studies involve both laboratory and synchrotron diffraction studies.


Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2010
Author(s):  
Elena S. Makarova ◽  
Anastasiia S. Tukmakova ◽  
Anna V. Novotelnova ◽  
Vladimir A. Komarov ◽  
Vasilisa A. Gerega ◽  
...  

We report on the production of 200 and 600 nm thick Bi films on mica substrate with 10 nm thick Sb sublayer between Bi and mica. Two types of films have been studied: block and single crystal. Films were obtained using the thermal evaporation technique using continuous and discrete spraying. Discrete spraying allows smaller film blocks size: 2–6 μ m compared to 10–30 μ m, obtained by the continuous spraying. Single crystal films were made by the zone recrystallization method. Microscopic examination of Bi films with and without Sb sublayer did not reveal an essential distinction in crystal structure. A galvanomagnetic study shows that Sb sublayer results in the change of Bi films properties. Sb sublayer results in the increase of specific resistivity of block films and has no significant impact on single crystal films. For single-crystal films with Sb sublayer with a thickness of 200 nm the Hall coefficient has value 1.5 times higher than for the 600 nm thickness films at 77 K. The change of the Hall coefficient points to change of the contribution of carriers in the conductivity. This fact indicates a change in the energy band structure of the thin Bi film. The most significant impact of the Sb sublayer is on the magnetoresistance of single-crystal films at low temperatures. The increase of magnetoresistance points to the increase of mobility of the charge carriers. In case of detecting and sensing applications the increased carriers mobility can result in a faster device response time.


2018 ◽  
Vol 112 (17) ◽  
pp. 173505 ◽  
Author(s):  
Y. J. Ma ◽  
J. Y. Xiao ◽  
Q. Y. Zhang ◽  
C. Y. Ma ◽  
X. N. Jiang ◽  
...  

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