Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement

2018 ◽  
Author(s):  
Yutaro Yamaguchi ◽  
Tomohiro Otsuka ◽  
Masatake Hangai ◽  
Shintaro Shinjo ◽  
Toshiyuki Oishi
Keyword(s):  
Large Signal ◽  
Signal Model ◽  
Ka Band ◽  
Nonlinear Capacitance ◽  
S Parameters ◽  
Parameters Measurement

MESFET large-signal model based on small-signal measurements for time-domain CAD

1988 ◽  
Vol 24 (15) ◽  
pp. 973 ◽  
Author(s):  
A. Ouslimani ◽  
G. Vernet ◽  
J.C. Henaux ◽  
P. Crozat ◽  
R. Adde
Keyword(s):  
Time Domain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Model ◽  
Model Based

Large-signal model of pulsed power load for analysis of dynamic voltage and frequency

2020 ◽  
Vol 14 (12) ◽  
pp. 2271-2281
Author(s):  
Jun Yan ◽  
Jinquan Wang ◽  
Ying Chen ◽  
Kefeng Huang ◽  
Chen Shen
Keyword(s):  
Pulsed Power ◽  
Large Signal ◽  
Signal Model ◽  
Power Load ◽  
Dynamic Voltage

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

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